Loading...
News Article

Qorvo enhances small cell infrastructure portfolio

News

Front-end solutions for sub-6 GHz wireless are designed to boost efficiency in high-density, high-traffic areas

At IMS 2019 in Boston this week, Qorvo has announced new power-efficient, small cell front-end solutions for the sub-6 GHz wireless infrastructure market. The products are designed to boost efficiency, enabling base station manufacturers to enhance existing 4G LTE infrastructure with greater bandwidth, coverage, throughput and capacity – particularly in high-density, high-traffic areas.

The new Qorvo solutions include the Band 3 QPA9903 power amplifier (PA), the Band 8 QPA9908 power amplifier, and the QPL9098 4-6 GHz bypass ultra-low noise amplifier. The PAs offer 34 percent power added efficiency, enabling Power over Ethernet (PoE) small cell architectures targeted for deployments in high-traffic areas, such as subways, train stations, and stadiums or for high quality of service (QoS) enterprise in-building applications.

The PAs are easy to linearise using DPD algorithms and their performance is optimised for wideband, multicarrier signals vs. a single 20 MHz carrier. The highly rugged PAs can handle high levels of signal mismatch at output – up to 20:1 Voltage Standing Wave Radio (VSWR). Rugged packaging withstands the impact of a wide range of challenging environments.

Roger Hall, general manager of Qorvo’s High Performance Solutions business, said: “Our new small cell products further expand Qorvo’s portfolio of economical, system-level architecture solutions for wireless infrastructure. By extending the bandwidth capacity of the existing network, customers can more cost-effectively transition to 5G and trust in Qorvo’s ability to scale to high-volume manufacturing.”

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: