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Thursday 30th May 2013
The firm's III-nitride LEDs have massive potential, particularly within the water space
Thursday 30th May 2013
The firm has qualified its gallium nitride transistor for military and satellite communications, broadband, RADAR, wireless and point to point microwave applications
Thursday 30th May 2013
The company's newly developed technology will enable wider variation in design and a higher brightness and smaller form factor in data projectors and vehicle headlights
Wednesday 29th May 2013
The gallium arsenide MMIC based on E-pHEMT and InGaP HBT technology enables real-time digital adjustment of phase and amplitude to boost efficiency and linearity
Wednesday 29th May 2013
The aim of the joint project is to provide a cost-effective buffer material to enable fabrication of gallium nitride (GaN) devices on silicon substrates
Wednesday 29th May 2013
Synthetic diamond enables higher performance gallium nitride devices. This results in smaller, faster and higher power electronic devices for defence and commercial applications
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Tuesday 28th May 2013
Scientists are using X-ray diffraction to further understand crystals that could improve warm-white LED performance
Tuesday 28th May 2013
Yole and the SiC Power Centre and the Enterprise Europe Network are hosting a European event, taking place between June 9th and 11th in Stockholm, Sweden
Tuesday 28th May 2013
The program will enable students to present their research, learn from international speakers, and network with other students in the field of optics
Tuesday 28th May 2013
Hiden Analytical is offering the choice of three initial equipment levels to suit a broad spread of budget capacities
Tuesday 28th May 2013
The EpiCurve Triple TT in-situ monitoring system is being used to develop epiwafers for InGaN/GaN LEDs and GaN power electronic devices
Monday 27th May 2013
The aluminium gallium arsenide based PIN diode series delivers cost, time and space savings for high-power switching applications
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Friday 24th May 2013
The GaN on GaN LED specialist has asked the EPA not to repeat mistakes made on compact fluorescent lamps (CFLs)
Friday 24th May 2013
The convertible senior notes will be due in 2018. Infinera expects to use the net proceeds of the offering for general corporate purposes, including working capital and potential strategic projects
Friday 24th May 2013
firm has launched a couple of indium gallium phosphide processes to address the VCO for point-to-point and 12V PA for small cell PA infrastructure markets
Friday 24th May 2013
Holders may require Infinera to repurchase their Notes at a purchase price equal to the principal amount thereof plus accrued and unpaid interest to, but excluding, the repurchase date
Friday 24th May 2013
Scientists have used electron microscopy imaging techniques on indium gallium nitride (InGaN) LEDs to settle the controversy of indium clustering and raise new experimental possibilities
Thursday 23rd May 2013
The firm's four-junction technology innovation opens the path to competitiveness in the PV industry
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Thursday 23rd May 2013
The firm has released significant new GaN products and foundry services
Thursday 23rd May 2013
The talks included GaN-on-silicon, HB-LED, SiC and III-V developments
Thursday 23rd May 2013
Dell'Oro says that indium phosphide (InP) PIC specialist Infinera accounts for 29 percent of all long-haul 100G ports sold since the long-haul 100G market emerged in 2010
Thursday 23rd May 2013
The firm's gallium arsenide (GaAs) based laser products have broken barriers in high volume photonic communications applications
Thursday 23rd May 2013
The firm's patented ISOGAIN gallium arsenide (GaAs) based technology achieves a linearisation of -53 dBc ACLR without the need for modem assistance or digital predistortion
Wednesday 22nd May 2013
The low noise broadband gallium arsenide based amplifier is suited for small cell and macrocell transceivers and applications requiring high linearity and high RF output power

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