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Wednesday 5th June 2013
The RF power pioneer's new A&D-focused unit will take a multi-technology approach to leverage the advantages of its gallium arsenide, gallium nitride and LDMOS product lines
Wednesday 5th June 2013
Substrate thinning, device encapsulation and the introduction of gold interconnects takes single-chip ultraviolet LED performance to a new level
Wednesday 5th June 2013
Researchers have inexpensively and precisely applied cadmium selenide quantum dots onto OLEDs using inkjet printing to produce QD-LEDs
Wednesday 5th June 2013
SETi is planning to commercialise its aluminium gallium nitride LEDs for use in refrigerators to delay the spreading of mould
Wednesday 5th June 2013
Qualcomm has developed a CMOS power amplifier (PA) which is intended to knockoff whitebox mobile phone vendors
Wednesday 5th June 2013
The firm maintains its Airfast RF gallium nitride power solutions deliver exceptional performance and industry-leading ruggedness
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Tuesday 4th June 2013
The company says gallium nitride HEMT prices have greatly improved and are now a viable alternative to silicon LDMOS transistors for cellular telecom amplifiers
Tuesday 4th June 2013
The silicon germanium device is designed for mobile communications and radar imaging applications. The solution is claimed to seamlessly bring together 4 integrated chips and 64 antennas in a single package
Tuesday 4th June 2013
The Molecular Beam Epitaxy (MBE) system used in GaAs wafer production was the most damaged and required a virtual rebuild although it has now been refitted
Tuesday 4th June 2013
The gallium nitride device integrates multiple chips within a single unit to enable more compact radars and wireless communications equipment
Tuesday 4th June 2013
The company has expanded its gallium nitride on silicon carbide portfolio of devices for the L-band avionics market
Tuesday 4th June 2013
Infinera's indium phosphide (InP) based PICs have been activated on the GEANT production network from Amsterdam to Frankfurt
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Tuesday 4th June 2013
The firm has launched its indium gallium arsenide phosphide on InP devices for wireless and distributed antenna system applications
Monday 3rd June 2013
License covers advanced RFSOI-based design, process and third-party sourcing
Monday 3rd June 2013
Veeco Receives Anticipated NASDAQ Notice of Non-Compliance and Has Requested a Hearing for Continued Listing
Monday 3rd June 2013
Everlight Electronics Co., involved in the global LED industry and with three decades of experience in optoelectronics, introduces three new 850nm HIR (high efficiency infrared) LEDs featuring a high output power and narrow viewing angles which make them ideal for use in high-tech intelligence touch panel and proximity sensors.
Monday 3rd June 2013
MicroWave Technology Inc., the RF division of IXYS Corporation announced that it offers an advanced AlGaAs/InGaAs pHEMT-based MMIC ultra-broadband driver amplifier product up to 50 GHz. The product is targeted at applications including fiber optics communications, microwave/mm-wave communications systems, microwave/mm-wave testing equipment, and military applications.
Monday 3rd June 2013
GigOptix, a supplier of advanced semiconductor and optical communications components, announces successful demonstration of new high E-band power amplifier EXP8603 with enhanced P1dB, P3dB and reduced power consumption.
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Friday 31st May 2013
The firm's latest III-nitride XH LEDs are claimed to deliver breakthrough reliability and performance
Friday 31st May 2013
The firm has released GaAs (gallium arsenide) and gallium nitride products to speed up uninterrupted connectivity
Friday 31st May 2013
The firm's gallium nitride power doublers provide excellent output power, linearity, and bit error rate performance for CATV system amplifier and deep fibre node applications
Friday 31st May 2013
A novel new lens could lead to improved photolithography, nanoscale manipulation and manufacturing and high-resolution 3D imaging
Thursday 30th May 2013
A new initiative is supporting research, development and innovation and improvement in the entire semiconductor ecosystem
Thursday 30th May 2013
Sometimes not. In samples which have been annealed at a high temperature, Hall measurements may indicate the wrong carrier type. In this case, other characterisation techniques, such as CV and photocurrent-based measurements, are more reliable

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