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Thursday 13th June 2013
Khaled Juffali company has announced a 1 MW project with the world’s largest oil producer. It aims to test CPV technology for future utility-scale installatins and lay solid groundwork for new solar projects in Saudi Arabia
Tuesday 11th June 2013
Researchers in the US have advanced molybdenum disulphide (MoS2) technology. This semiconductor could be joined with graphene and hexagonal boron nitride to form FETs, integrated logic circuits, photodetectors and flexible optoelectronics
Monday 10th June 2013
Scientists have demonstrated what they claim is the first monolithic integration of an LED and High-Electron-Mobility Transistor (HEMT) on a single gallium nitride chip
Monday 10th June 2013
The supplier of III-V based chip-sets enables high speed optical interconnects in data centres for short and long reach high speed connectivity applications
Monday 10th June 2013
The SPIE awarded Siva Sivananthan for his contributions to the development of II-VI photovoltaic materials
Monday 10th June 2013
From April 2012 to late March 2013, roughly 350 patent applicants related to AlGaN, InGaN and GaN were filed. These were by organisations based in Japan, Korea, USA and China
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Friday 7th June 2013
To bind gallium nitride with manganese, scientists have used the nitrogen polarity of GaN and heated the sample
Friday 7th June 2013
The US Department of Energy has invested in five companies to drive cost-competitive next generation efficient LED lighting
Friday 7th June 2013
The device employs GaAs pHEMT technology and offers a low cost compact space-saving broadband solution
Friday 7th June 2013
The institute will present its latest results on 930 - 970nm GaAs (gallium arsenide) based pump laser sources at CLEO 2013
Thursday 6th June 2013
The gallium nitride devices are claimed to be about half the size of similar power amplifiers
Thursday 6th June 2013
The firm's gallium nitride device is targeted towards the military and commercial high-power amplifier markets
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Thursday 6th June 2013
The gallium nitride device supports radar architectures requiring ruggedness and reliability
Thursday 6th June 2013
The 8.0 mW/[email protected] mA version can match or exceed 5mm IR diodes. This allows extended battery lifetime of handheld devices, or increased panel sizes
Thursday 6th June 2013
Addition of both ceramic and plastic packaged 48V power transistors to its industry-standard packaged devices have extended capabilities in the defence and high volume commercial markets
Thursday 6th June 2013
Plasma-assisted MBE growth of InGaN directly on to silicon helps the development of tandem solar cells and optoelectronic devices operating at telecom wavelengths
Thursday 6th June 2013
The firm's cadmium telluride (CdTe) modules will be deployed in the 50MW plant. The project will create 300 jobs during the construction period
Thursday 6th June 2013
Yole Développement analysis have charted the obstacles facing adoption of durable sapphire screen covers, showing that immediate use in a new iPhone would be too great a strain on the supply chain
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Thursday 6th June 2013
The company’s latest silicon-germanium chip-making process enables data to flow through network backbones in applications such as Wi-Fi, LTE cellular, wireless backhaul and high speed optical communications
Wednesday 5th June 2013
The gallium nitride module are optimised for high power, gain and efficiency to support extended C-band applications
Wednesday 5th June 2013
The gallium nitride 200W power amplifier offer high power, gain and efficiency to enhance weather RADAR performance
Wednesday 5th June 2013
The aim of a joint project is to enable highly mismatched combinations such as GaAs-on-silicon, GaAs-on-InP, InP-on-germanium and GaAs-on-gallium antimonide
Wednesday 5th June 2013
Workshop attendees came from disciplines as diverse as LEDs, power, photonics, nanotechnology and MEMS participated in the full day event
Wednesday 5th June 2013
The firm's new breakthrough technology delivers contractors quick Retrofit to LED lighting

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