Sanan Expands with 150mm GaN-on-Silicon Process
China's first 6-inch compound semiconductor wafer foundry targets high voltage AC/DC and DC/AC power electronics applications
Sanan IC, China's first 6-inch compound semiconductor wafer foundry, has announced the commercial release of its 150mm GaN on silicon wafer foundry services intended for the latest high voltage AC/DC and DC/AC power electronics applications.
Sanan IC˙s new G06P111 is a 650V enhanced-mode high-electron-mobility transistor (E-HEMT) GaN process which adds to the company˙s power electronics wafer foundry portfolio of wide bandgap (WBG) compound semiconductors that includes 100mm and 150mm SiC (SiC) for high voltage Schottky Barrier Diodes (SBD).
Building on years of high volume GaN manufacturing experience by Sanan Optoelectronics Inc., its parent company, for the LED market, Sanan IC is able to complement its foundry services with in-house MOCVD growth capabilities of high voltage, low leakage GaN-on-silicon epitaxial wafers with high uniformity.
"The launch of our 650V GaN E-HEMT process technology exemplifies our commitment to advanced compound semiconductor manufacturing for serving the global marketˇ, said Jasson Chen, assistant general manager of Sanan IC. "We view GaN-on-silicon as a complimentary technology to SiC as key wide bandgap semiconductors of choice for today˙s high voltage, high power electronics industry. Component suppliers and system designers are migrating to wide bandgap semiconductors over traditional silicon for enhanced performance, efficiency, and reliability in high power analog designs. Sanan IC is well positioned for success in serving this high growth, large-scale power electronics marketˇ.
The company˙s G06P11 GaN-on-silicon process, having passed the JEDEC standard for process reliability qualification, offers device structures for 650V E-mode FETs which support a drain-to-source on-state resistance RDS(on) range from 50mΩ to 400mΩ. Engineered for low leakage, low gate charge, high current density, and low dynamic specific on resistance (Rsp), it enables ultra-fast switching compact designs for high temperature operation. Following later this year would be the launch of a 200V GaN E-HEMT process as well as a second generation SiC SBD process with a merged PiN Schottky (MPS) diode structure.
According to market research firm Yole Developpement (Yole), the GaN power device market is forecasted to have a value over $423M by 2023 with a compound annual growth rate (CAGR) of 93 percent from 2017 to 2023.
