Exagan Opens Power Solutions Centre in France
Toulouse facility provides customers with application-development and product-validation capabilities
Continuing its progress in accelerating the adoption of GaN-on-silicon semiconductors in power markets, Exagan has opened a new Power Solutions centre in Toulouse, France, to extend its applications support and market reach in wide-ranging, customer-specific end products.
The opening of the bfacility, which is operating in close collaboration with technology partner CEA Tech, follows the launch of Exagan’s first GaN applications centre in Taiwan last October.
The Toulouse facility provides customers with new application-development and product-validation capabilities using highly specialised electronic equipment. It also enables Exagan to master new architectures for GaN solutions while also boosting power-conversion efficiencies in current topologies.
Exagan is exhibiting its GaN-based product portfolio at this week’s PCIM Europe conference in Germany. The company is showing the performance of its G-FET power transistors in applications such as 65-watt USB PD 3.0 power chargers and power factor correction (PFC) ranging from 300 watts up to 1.5 kilowatts for next-generation data centres.
G-FET power transistors can be fabricated in existing 200-mm CMOS wafer fabs, enabling a multi-source supply, easy scalability and optimal cost/performance benefits.
“Building on a robust GaN technology and product portfolio, Exagan is now deploying GaN Power Solutions centres in Europe and Asia to work closely with customers. Our goal is to deliver the best functionality and value by optimising GaN devices’ industry-leading balance of power density, power efficiency, reliability and system costs,” said Frédéric Dupont, president and CEO of Exagan.
