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Wednesday 28th March 2012
The Oxford Instrument tools will complement an already existing tool set dedicated to the processing of III-V photonic devices. They will strengthen research capabilities in silicon containing materials as well as be used for etching more “exotic” materials such as niobium nitride
Wednesday 28th March 2012
The unison of the telecom and datacom innovators hopes to create a new leader in the fast-growing optical components and modules market, which is forecast to reach $9.2 billion in 2015
Wednesday 28th March 2012
The firm is selling fixed assets, inventory and intellectual property for the VCSEL-based product lines within Emcore's fibre optics business unit. The transaction will allow the company to invest further in telecom, broadband and specialty photonics products
Wednesday 28th March 2012
The firm says its process has achieved record mobility and sheet resistance in indium gallium nitride channel HEMTs grown on silicon carbide for next generation high-performance electronic devices
Wednesday 28th March 2012
The first three quarters of 2012 combined are anticipated to be about the same as just one of the peak quarters of 2009 and 2010 when there were over 230 GaN MOCVD reactors shipped
Wednesday 28th March 2012
A breakthrough in gallium arsenide technology should enable Odis to take the first step in realising a single device capable of interconnecting multiple processors
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Tuesday 27th March 2012
The Japanese firm will use the MOCVD tool for indium gallium arsenide phosphide research
Tuesday 27th March 2012
IQE and Silex will unite in a $2m Australian Solar Institute programme to improve III-V multiple-junction solar cells using novel Germanium-on-Silicon technology
Tuesday 27th March 2012
Scientists have developed Hall effect gallium nitride based magnetic field sensors which can be used in space crafts and nuclear power stations
Monday 26th March 2012
The global supplier of network and hosting services, will use Infinera's coherent 40 Gbps DTN solutions based on indium phosphide, for the optical subsea network in the Asia Pacific region
Monday 26th March 2012
Decimation of optical quality associated with point defects has been identified as in-grown gallium vacancies rather than isolated gallium vacancies typically introduced by high electron energy irradiation
Saturday 24th March 2012
The fully certified high-efficiency thin-film solar modules from the 100 MW line have begun shipping, with commercial shipments from the factory starting later this month
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Friday 23rd March 2012
The global provider of MBE systems will supply an Epineat MBE reactor for research and development of 4-inch III-V compound semiconductor materials in Russia
Friday 23rd March 2012
Keithley's new tool is optimised for characterising many materials including gallium nitride, silicon carbide and other compound semiconductor materials
Thursday 22nd March 2012
The pioneer in gallium nitride on silicon technology is strengthening customer support in Taiwan by assigning Sumitomo as its exclusive local distribution partner
Thursday 22nd March 2012
The manufacturer of nitride LEDS has met additional requirements necessary to serve the aviation, space and defence industries
Thursday 22nd March 2012
Michael Povlin has been appointed as Director Sales and Marketing to lead marketing strategy and sales execution throughout Europe, the Middle East and Africa
Thursday 22nd March 2012
The firm, which produces III-V multi-junction solar cells using its Concentrix technology, is now qualified with TQM systems for ISO/TS, ISO 9001, ISO 14001 and OHSAS 18001
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Thursday 22nd March 2012
IQE’s strategic CPV partner has been honoured for its SJ3 product, which enabled the company to fabricate III-V based solar cells with a record 43.5 percent efficiency
Wednesday 21st March 2012
Osram's new Ostar Stage LEDs have a flat glass window with an anti-reflective coating, giving the LED a much flatter profile. At a quarter of the usual height, the LEDs enable much more compact spotlights
Wednesday 21st March 2012
The team from the FBH has been awarded for the transfer of its powerful diode laser technology used for materials processing, into a manufacturing environment
Wednesday 21st March 2012
The wireless market accounted for more than 73% of revenues but the company lost out in the electronics sector where it made an operating loss of £548,000
Wednesday 21st March 2012
The company is celebrating the tenth anniversary of its Beijing manufacturing facility and fifth anniversary of its Shanghai design centre
Wednesday 21st March 2012
TriQuint's two new chips, which employ the firm's gallium arsenide pHEMT technology, are suited to cable TV and broadband applications

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