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Monday 19th March 2012
The firm is now qualified to sell the 1100 mm x 1400 mm in Europe, Asia and other countries
Monday 19th March 2012
The firm's new facility in New York will concentrate on nanomaterial applications
Monday 19th March 2012
The firm will describe its developments on E/D mode III-nitride devices and integrated gallium nitride X-band amplifiers
Monday 19th March 2012
The microscope incorporates a high resolution indium gallium arsenide camera. It allows an operator to see through materials that are transparent in the infrared range between 740 nm and 1700 nm
Monday 19th March 2012
Using a novel growth method, a Swedish university spin-off has begun to grow graphene consisting of a single layer of carbon atoms, on silicon carbide. The growth method concentrates on how the heating process can control the interaction of silicon and carbon at the surface of the material
Monday 19th March 2012
XCAP Securities has been appointed as joint broker by ProPhotonix
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Saturday 17th March 2012
The firm's single channel GX6255 driver has been ordered by a number of tier one Asian telecom customers and is now being manufactured in volume
Saturday 17th March 2012
Between 2013 and 2017, market penetration is expected to grow from 2% to around 10% in 2014 and 25% by 2017
Friday 16th March 2012
The training and demonstration laboratory supports China's global LED ambitions
Friday 16th March 2012
The Probus-SiC silicon carbide system will be used to volume produce advanced SiC power devices
Friday 16th March 2012
The company says it will return to Aixtron in the future to help with its plans for ramping up the production of gallium nitride based materials
Friday 16th March 2012
Leading III-V chipmakers, first-rate toolmakers and the most innovative start-ups grabbed the 2012 Compound Semiconductor Industry Awards.
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Friday 16th March 2012
On receiving UL, IEC and ISO 9001 certification, the firm has started to produce modules at its manufacturing facility in Taichung, Taiwan
Friday 16th March 2012
The EU-funded project, which integrated SOI with indium gallium arsenide detectors, has succeeded in developing cheap and power efficient devices for telecoms
Friday 16th March 2012
Spire, TSMC, Avancis, Soitec and centrotherm increased module manufacturing capabilities in the last quarter of 2011
Thursday 15th March 2012
TriQuint, Mitsubishi Electric, Nitronex, RFMD and Cree are among the companies announcing new developments on GaN devices
Thursday 15th March 2012
The Korean-based manufacturer is currently shipping GTAT's ASF-grown sapphire material to large LED customers in Taiwan, Korea, China and Japan. The firm hopes to be one of the top 3 ingot providers of 6" sapphire by 2015
Thursday 15th March 2012
The expansion, in its Mississippi plant is expected to drive the firm's silicon carbide fabrication facility. It will also improve customer service to those who are adopting the company’s diode and power transistor products
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Wednesday 14th March 2012
Using PIE technology, the firm's new tool produces monocrystalline wafers that are less than a tenth of the thickness of conventional wafers used in solar, semiconductors and wireless devices
Wednesday 14th March 2012
The firm will develop its QLED technology to eventually produce devices that can be employed by U.S. forces
Wednesday 14th March 2012
The aperture efficiency of the firm’s independently tested panel has increased from 11.2% to 13.4%. The efficiency was improved by using new processes implemented in SoloPower’s roll to roll production line
Wednesday 14th March 2012
The foundry business division of Spire will now be able to focus on Masimo’s custom component requirements and accelerate technology advancements in non-invasive blood monitoring
Tuesday 13th March 2012
Despite gallium nitride being so illusive, IMS Research says that by 2021, the market for power devices using this material will exceed $1 billion
Tuesday 13th March 2012
The two organisations aim to advance CMOS devices using high-mobility Germanium and III-V compound semiconductor channels

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