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Monday 21st May 2012
The producer of devices such as 650nm III-V based VCSELs is taking on Hsin Chia to drive strategic expansion of the firm
Friday 18th May 2012
The novel formulation boosts efficiency in copper indium gallium (di)selenide solar sells
Friday 18th May 2012
A Japanese firm is planning on developing a range of LED applications that incorporate Nanoco's red and green quantum dots including the backlighting of LCD displays and LED-based general lighting
Friday 18th May 2012
The lasers are nanometre-sized semiconductor particles called colloidal quantum dots (CQDs) with an inner core of cadmium and selenium alloy and a coating of zinc, cadmium, and sulphur alloy. Adjusting the size of the pyramid-shaped QDs changes the laser light colour
Friday 18th May 2012
The global supplier of solar related products and III-V compound semiconductor device and process developer, has begun trading in this U.S. stock market
Friday 18th May 2012
The new product line of high speed 850nm gallium arsenide based VCSEL chips are compact and have an ultrahigh modulation rate
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Friday 18th May 2012
Apart from in healthcare, where Quantum Dots hold a large market share, the technology is expected to play a major part in LED lighting and solar cells in the future
Thursday 17th May 2012
The patent allows the silicon carbide innovator to fine tune its vertical channel junction field effect transistors and diodes to get even closer to the unipolar theoretical limit
Thursday 17th May 2012
A new high performance gallium arsenide device has been revealed by RFMD
Wednesday 16th May 2012
The designer and developer of analogue III-V semiconductor devices and the gallium arsenide and gallium nitride innovator have come to an agreement to cross licensing patents
Wednesday 16th May 2012
The firm says that by using a depletion mode silicon carbide JFET, designers can achieve a fast start-up using no extra components such as an extra heat sink
Wednesday 16th May 2012
The multi-junction solar cell provider will provide solar panels composed of indium gallium phosphide and indium gallium arsenide on a germanium substrate for the soil moisture active passive (SMAP) mission
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Wednesday 16th May 2012
The FEM uses the firm's indium gallium phosphide and gallium arsenide technologies
Wednesday 16th May 2012
The indium phosphide chip manufacturer has will employ the Verian system as a requisitioning and approval workflow tool that integrates directly into SAP
Wednesday 16th May 2012
The device features an aluminium gallium arsenide LED and is suited to harsh application environments like motor control, measuring instruments as well as factory automation
Wednesday 16th May 2012
The agreement made by the provider of group III materials used in the MOCVD industry ,consists of a $20 million public bought‐deal offering and a $20 million concurrent private placement
Tuesday 15th May 2012
Eliot Parkinson is taking over from Adrian Meldrm at the firm's Cardiff III-V facility
Tuesday 15th May 2012
The UK-based firm has received an order for a physical vapour deposition which will be used for compound semiconductor growth. These will include gallium arsenide and aluminium nitride RF devices
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Tuesday 15th May 2012
Peter Bauer is resigning as CEO of new gallium nitride-on-silicon developer Infineon Technologies AG effective September 30, 2012 due to health reasons
Tuesday 15th May 2012
A new report says silicon manufacturer Broadcom and compound semiconductor supplier TriQuint are good examples that illustrate that the semiconductor industry is bouncing back
Tuesday 15th May 2012
The fast switching, high current handling and superior thermal properties of silicon carbide devices are ideal for solar inverters, SMPS, PFC circuits, induction heating, UPS and motor drives
Monday 14th May 2012
The addition of the 3020 series will provide a smaller footprint with higher light density
Monday 14th May 2012
One of the concepts currently in development is an unmanned aerial vehicle which stores electric power to enhance its potential for long endurance, quiet operations and low emissions
Monday 14th May 2012
The aluminium gallium nitride UV LED innovator has been awarded for its role in research and development for the U.S. government under the SBIR program

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