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Tuesday 31st January 2012
Rice University researchers first to see superfluorescence from solid-state material, incorporating indium, gallium and arsenide quantum wells separated by gallium arsenide barriers
Tuesday 31st January 2012
When six month old CdSe/CdS nanocrystals in solution were subjected to ultraviolet light, luminescence increased by seven times
Monday 30th January 2012
The provider of compound semiconductor-based components and subsystems for the fibre optic and solar power markets expects the common stock will begin trading on a split adjusted basis on February 16, 2012
Monday 30th January 2012
The specialist in defence and homeland security products which employ gallium arsenide and gallium nitride technology now has 10 directors
Monday 30th January 2012
The aquarium fish pet supply store, offers a new line of LED aquarium lights, to give fish hobbyists the most advanced products from the LED innovator
Monday 30th January 2012
The aluminium gallium arsenide LED features a wide-emission angle for coverage over a large area and extremely high optical output (minimum 30, typical 40 mW) with peak emission wavelength at 850 nm
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Monday 30th January 2012
The arrays are engineered to support rapid development of downlight and retrofit bulb solutions where quality of light and efficacy are essential
Monday 30th January 2012
These digital metering and control devices are used in machinery used to produce compound semiconductor chips, LEDs and solar cells
Friday 27th January 2012
The firm's RFeIC architecture can be implemented in gallium arsenide-based HBT, indium phosphide-based HEMT and silicon germanium-based BiCMOS technologies
Friday 27th January 2012
Changing the sputtering system from planar to rotary targets increases the target utilisation from about 30 to 75%
Friday 27th January 2012
The designer and manufacturer of utility-scale concentrated photovoltaic (CPV) multi-junction III-V solar power systems has received ISO 9001:2008 and IEC 62108 certifications
Friday 27th January 2012
The optical communications and laser innovator had revenues of $86.5 million for the second quarter of fiscal 2012, compared to revenues of $120.3 million for Q2 FY 2011
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Thursday 26th January 2012
Powerex is introducing two new split dual silicon carbide devices which are designed for use in high frequency applications power systems. They are ideal for use in fans, pumps ,UPS, high speed motor drives as well as electric vehicle and aviation systems
Thursday 26th January 2012
In conjunction with VistrianMES, the FactoryLOOK manufacturing intelligence solution provides visibility, traceability & accountability to NuvoSun’s manufacturing operations
Thursday 26th January 2012
The LED, grown on an aluminium nitride substrate, is designed specifically to simplify solution design and reduce costs
Thursday 26th January 2012
The gallium arsenide QWI based devices are designed for defence, medical, and industrial applications and thulium holmium pumping applications
Thursday 26th January 2012
The CIGS cell manufacturer has also received significant amounts of funding from the California Energy Commission as well as the National Science Foundation
Thursday 26th January 2012
The two firms will install complete and fully integrated III-V multi-junction solar cell systems for agricultural applications
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Thursday 26th January 2012
The firm's LEDway luminaires are replacing more than 3,600 antiquated street lights in Asheville
Thursday 26th January 2012
Instrument Systems is launching a new series of CCD array spectrometers and a current source. Both have been specially designed to assess LEDs
Wednesday 25th January 2012
A new procedure to measure SEM samples greatly improves its ability to measure the crystal structure of nanoparticles and extremely thin films including indium gallium nitride
Wednesday 25th January 2012
The manufacturer of instruments used in the compound semiconductor industry has gradually expanded ; it now has representations through Europe, Asia and through North and South America
Wednesday 25th January 2012
The facility will expand the firm's gallium arsenide, indium phosphide and germanium substrate manufacturing capacity. It will complement the company's current 190,000 square foot facility in Beijing
Wednesday 25th January 2012
The 910nm to 1070nm phosphide based diodes deliver the highest power levels

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