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Friday 9th March 2012
The three reactors will be used to produce gallium nitride chips for use in HB-LEDs
Friday 9th March 2012
The firm's LaserTrace 3 detects moisture and oxygen in inert gases at limits that are more than two times lower than previous generations of the product line
Friday 9th March 2012
IBM has found a novel technique of speeding up data transfer rates using tiny holes in a single quarter-inch chip using gallium arsenide
Friday 9th March 2012
The £1.8 million will be used to purchase key capital equipment for HB-LED pilot scale development and create a specialist engineering team
Friday 9th March 2012
The supplier of crystalline III-nitride semiconductor materials including GaN, AlN, AlGaN and related products and services, has received funding from the NC Green Business Fund
Thursday 8th March 2012
The funding will allow the company to focus on building the commercial side of its business with both traditional glass-on-glass and flexible products
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Thursday 8th March 2012
Scientists from the firm have found that low temperature growth encourages nitrogen incorporation in indium nitride
Thursday 8th March 2012
Suited to coherent applications, the device is ideal for use in high-speed 40 and 100 Gb/s coherent transmission systems
Wednesday 7th March 2012
The GaN market will see current LED players broaden their horizons into power devices using their existing capabilities
Wednesday 7th March 2012
According to a new European Photonics Industry Consortium (EPIC) report, the HB-LED market made a 7% increase on a year-to-year basis in 2011
Wednesday 7th March 2012
Owens Design says its customised automated solutions enable low risk and lost cost entry into new market applications
Wednesday 7th March 2012
The broad range of networking solutions leverage the firm's reference designs for mobile connectivity applications
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Wednesday 7th March 2012
The company will sell FCI MergeOptics products, including those incorporating III-V VCSELs, designed for use in the optical communications, fibre and Ethernet industries
Wednesday 7th March 2012
The extension of the gallium arsenide based series will include multiple new 3G and 4G LTE power platforms variants
Wednesday 7th March 2012
The developer of semiconductor lasers, systems and solutions has recruited Beate Sauter to the position of Director of European Sales.
Wednesday 7th March 2012
A collaboration between the two firms sees the performance of Oclaro's indium phosphide tuneable laser rocket for Huawei's future optical network
Wednesday 7th March 2012
Although the firm's income plummeted, III-V revenues rose 6.8 percent to $66.5 million for fiscal 2011 and overall, Kopin fared better than it did last year
Tuesday 6th March 2012
Aixtron SE has a number of stock option programs in place that grant employees and the members of the Executive Board the right to purchase Aixtron shares under certain conditions
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Tuesday 6th March 2012
The design win is for the firm's second-generation ultra-high efficiency family of power amplifiers
Tuesday 6th March 2012
OneChip has also appointed compound semiconductor industry expert, Dan Meerovich, as Vice President of Global Manufacturing Operations
Tuesday 6th March 2012
Cable&Wireless Worldwide will deploy Infinera's 500 Gb/s super-channels, which employ indium phosphide technology, on one of the most advanced and reliable fibre optic networks in the region
Tuesday 6th March 2012
CEA-Leti and III-V Lab have developed the device which incorporates a hybrid III-V compound semiconductor tuneable laser on silicon
Tuesday 6th March 2012
The latest Department of Energy funds will develop ways to enhance the cadmium telluride back contacts by looking at new materials
Tuesday 6th March 2012
A new material which has the same coefficient of thermal expansion as sapphire, minimises cracks in nitride semiconductor layers grown on these wafers which are used to make LEDs

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