Info
Info
News search:

< Page of 578 >

News


Tuesday 17th January 2012
Weakness in backlighting suggests that ASPs for certain markets were down as much as 45% in 2011. However, the GaN LED market is expected to recover between 2012 to 2015 and experience double-digit growth in 2013 and 2014 as the lighting market accelerates
Tuesday 17th January 2012
The planetary reactor will be used to manufacture next generation high voltage (5-15kV) silicon carbide devices with thicknesses over 100 microns
Tuesday 17th January 2012
The low-loss power devices contribute to better power efficiency in high-output electronic systems such as air conditioners, communication base stations, and solar power arrays
Monday 16th January 2012
Infinera's indium phosphide PICs will simplify optical transport for triple play, mobile backhaul, high-speed Internet and business broadband services
Monday 16th January 2012
The provider of semiconductor products for power and security has been honoured for its excellence in a number of departments
Monday 16th January 2012
The global provider of telecommunications equipment and network solutions awards Anadigics for outperforming over 1,000 suppliers
Info
Monday 16th January 2012
Agilent's newest ADS model library includes Mitsubishi's high-power gallium nitride HEMT and low-noise HEMT devices commonly used in base station and direct-broadcast satellite receivers
Monday 16th January 2012
The 1MW project will be the first in the Andhra Pradesh region to use Abound Solar's cadmium telluride modules
Friday 13th January 2012
Although the developer and manufacturer of blue, green and UV LED chips and LED components has suffered from poor market conditions, it will continue to pursue the indoor lighting market
Friday 13th January 2012
Originally established as a producer of green lasers in January of 1997, B&W Tek has grown into a provider for a wide range of spectroscopy applications
Friday 13th January 2012
A new versatile indium gallium arsenide device aims to maximise test time by simplifying measurement in analogue RF links and ultrafast digital communications
Friday 13th January 2012
The good news is that the wireless/WiFi market should recover in 2012 and the gallium arsenide IC market should register an 8% gain
Info
Friday 13th January 2012
The micro lensed tool will be exhibited at SPIE’s BiOS & Photonics West conferences
Friday 13th January 2012
The firm has appointed two industry sales veterans; one will be responsible for coordinating the early adaption of 450mm wafers. The other will take on the role of Country Manager for Japan and Korea
Friday 13th January 2012
The cash will be used to deploy a second CIGS line at the company’s Sunnyvale facility
Friday 13th January 2012
Osram's high-performance indium gallium nitride LED chips are fabricated on wafers with a diameter of 6 inches
Thursday 12th January 2012
The partnership is aimed at developing and marketing high bandwidth, harsh environment optoelectronic solutions for the military, aerospace, commercial aviation, and oil and gas industries
Thursday 12th January 2012
The Japanese global manufacturer of compound semiconductor devices acquires the germicidal LED technology development company
Info
Thursday 12th January 2012
The advanced silicon carbide based platform doubles lumens-per-dollar to accelerate the adoption of LEDs
Thursday 12th January 2012
The firm's LDs, based on indium gallium nitride technology, are fabricated on nonpolar and semipolar GaN substrates and are being showcased at International CES 2012
Wednesday 11th January 2012
The semiconductor equipment manufacturer says the preparation for the judging process uncovered unexpected benefits by identifying the positive points as well as areas for improvement
Wednesday 11th January 2012
The firm says it has made R & D breakthroughs in gallium nitride devices used for highly advanced, mixed-signal digital / RF circuits
Wednesday 11th January 2012
At International CES, the company is exhibiting a full spectrum of projector products integrating its LED technology, ranging from a 50 lm pico projector to a 4000 lm hybrid projector
Wednesday 11th January 2012
Pierre Yves Lesaicherre succeeds Michael C. Holt and will report directly to Philips Lighting’s acting Chief Executive Officer Frans van Houten

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info