News Article

Qorvo Announces 39GHz GaN Front End Module

Dual-channel FEM is built on 0.15-micron GaN-on-SiC technology

Qorvo has announced the industry's first GaN-on-SiC front-end module (FEM) for the 39GHz 5G frequency band.

The dual-channel QPF4005 is built on Qorvo's 0.15-micron GaN-on-SiC technology. It integrates two identical, multi-function GaN MMICs into a small footprint, optimised for phased array element spacing at 39GHz. 

Each of the MMICs contains a low-noise amplifier, a SPDT switch and a power amplifier.

James Klein, president, Qorvo Infrastructure and Defense Products, said: "Qorvo's announcement of the industry's first dual-channel GaN front-end module for 39GHz is a key enabler for 5G fixed wireless networks. The QPF4005 combines our millimeter wave expertise and field-proven GaN-on-SiC process technology to help telecom providers quickly and cost-effectively deliver more data to homes and mobile hotspots."

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