Qorvo Announces 39GHz GaN Front End Module
Dual-channel FEM is built on 0.15-micron GaN-on-SiC technology
Qorvo has announced the industry's first GaN-on-SiC front-end module (FEM) for the 39GHz 5G frequency band.
The dual-channel QPF4005 is built on Qorvo's 0.15-micron GaN-on-SiC technology. It integrates two identical, multi-function GaN MMICs into a small footprint, optimised for phased array element spacing at 39GHz.Â
Each of the MMICs contains a low-noise amplifier, a SPDT switch and a power amplifier.
James Klein, president, Qorvo Infrastructure and Defense Products, said: "Qorvo's announcement of the industry's first dual-channel GaN front-end module for 39GHz is a key enabler for 5G fixed wireless networks. The QPF4005 combines our millimeter wave expertise and field-proven GaN-on-SiC process technology to help telecom providers quickly and cost-effectively deliver more data to homes and mobile hotspots."
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST)
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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
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