Navitas to give keynote at Taiwan Power Event
GaN integration will enable a new class of faster-charging, smaller, lighter power systems
Navitas looks forward to demonstrating how monolithic integration of power, drive and logic "“ all in GaN - leads to a new generation of high-efficiency, high-density chargers and adapters for smartphone, laptop, consumer, TV, and new energy applications
Navitas Semiconductor has announced that Peter Huang, director field application and technical marketing, will deliver a keynote presentation titled, 'GaN Power ICs Enable Next Generation Power Adaptor Design' at the Micro Electronics 2018 Power Design and Power Components Technology Forum, in Taipei on January 30th 2018.
Navitas is the silver sponsor of the conference, which presents an interactive forum for manufacturers, partners, and customers to share expertise in accelerating adoption of new GaN and SiC devices.
"After 40 years of slow, inefficient silicon devices, the power electronics industry is entering an exciting era of new materials, new devices, new magnetics, new controllers and imaginative topologies," said Huang.
"Navitas looks forward to demonstrating how monolithic integration of power, drive and logic "“ all in GaN - leads to a new generation of high-efficiency, high-density chargers and adapters for smartphone, laptop, consumer, TV, and new energy applications."
