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Thursday 2nd February 2012
The device incorporates the firm's gallium arsenide pHEMT and indium gallium phosphide HBT technology
Wednesday 1st February 2012
Confirmed by the Instituto de Energía Solar of the Universidad Politécnica de Madrid, Semprius' gallium arsenide based multi-junction cells have been independently verified
Wednesday 1st February 2012
The 45 Cree THE EDGE LED area luminaires are providing significant reductions in energy usage and costs while dramatically improving visibility and overall safety
Wednesday 1st February 2012
The recently released gallium arsenide based devices are ideal for automotive, microwave radio, test equipment, military and space applications up to 50 GHz
Wednesday 1st February 2012
NanoMarkets forecasts revenues from CIGS panels will reach $4.4 billion by 2017
Wednesday 1st February 2012
The cadmium telluride photovoltaic power plant in California will generate enough electricity for 160,000 homes
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Wednesday 1st February 2012
Luminaires from Arquiled, featuring the Oslon SSL LEDs, are now in all of the food retail group's new stores
Wednesday 1st February 2012
The firms will attempt to accelerate the mass transition of indium phosphide optical modules into 100GbE products for cloud, data centre and 100G transport applications
Wednesday 1st February 2012
The new devices extend the benefits of silicon carbide and enables the replacement of silicon diodes across a wide range of power levels
Tuesday 31st January 2012
The thin film solar cell conference will present leading CIGS players on February 1 and 2, 2012, in San Francisco
Tuesday 31st January 2012
A new gallium arsenide phosphide non-descanned photodetector for highly sensitive photon detection and fluorescence imaging
Tuesday 31st January 2012
Everlight is offering 'smart binning' for its Shuen and Shwo high power LED series
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Tuesday 31st January 2012
The aluminium indium gallium phosphide and indium gallium nitride LEDs come in white and a range of colours for backlighting applications
Tuesday 31st January 2012
The technology is developed for mid band and high band PAs which employ gallium nitride semiconductors
Tuesday 31st January 2012
Rice University researchers first to see superfluorescence from solid-state material, incorporating indium, gallium and arsenide quantum wells separated by gallium arsenide barriers
Tuesday 31st January 2012
When six month old CdSe/CdS nanocrystals in solution were subjected to ultraviolet light, luminescence increased by seven times
Monday 30th January 2012
The provider of compound semiconductor-based components and subsystems for the fibre optic and solar power markets expects the common stock will begin trading on a split adjusted basis on February 16, 2012
Monday 30th January 2012
The specialist in defence and homeland security products which employ gallium arsenide and gallium nitride technology now has 10 directors
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Monday 30th January 2012
The aquarium fish pet supply store, offers a new line of LED aquarium lights, to give fish hobbyists the most advanced products from the LED innovator
Monday 30th January 2012
The aluminium gallium arsenide LED features a wide-emission angle for coverage over a large area and extremely high optical output (minimum 30, typical 40 mW) with peak emission wavelength at 850 nm
Monday 30th January 2012
The arrays are engineered to support rapid development of downlight and retrofit bulb solutions where quality of light and efficacy are essential
Monday 30th January 2012
These digital metering and control devices are used in machinery used to produce compound semiconductor chips, LEDs and solar cells
Friday 27th January 2012
The firm's RFeIC architecture can be implemented in gallium arsenide-based HBT, indium phosphide-based HEMT and silicon germanium-based BiCMOS technologies
Friday 27th January 2012
Changing the sputtering system from planar to rotary targets increases the target utilisation from about 30 to 75%

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