Info
Info
News search:

< Page of 578 >

News


Tuesday 7th February 2012
Despite generally positive results and continuing development activities in the optoelectronics industry, the LED market slowed down towards the end of 2011
Monday 6th February 2012
Verified by NREL the, gallium arsenide solar cell technology moves closer to solar power without subsidies
Monday 6th February 2012
The manufacturer of thin-film cadmium telluride solar cells says its module represents a 12.2 percent aperture efficiency and is being verified by the U.S. Department of Energy's NREL
Monday 6th February 2012
The behaviour-based model enables power electronic design engineers to quantify the benefits of silicon carbide MOSFETs in board-level circuit simulation
Monday 6th February 2012
The provider of high-speed analogue semiconductor indium phosphide based solutions for the communications and computing markets will present its outlook this week at two talks in California
Monday 6th February 2012
A new technique for manufacturing gallium nitride LEDs on silicon is to be exploited in the UK, putting mass-produced, energy-efficient lighting within reach
Info
Friday 3rd February 2012
Tamer brings to the communications specialist, which uses indium phosphide, gallium arsenide, silicon germanium and CMOS technology, over 20 years of experience. He has previously been involved in building successful technology businesses, and has particular expertise in the semiconductor sector
Friday 3rd February 2012
The provider of microelectronics and optoelectronic packaging systems has developed a precision eutectic process for these devices
Friday 3rd February 2012
The X10 module delivers up to 50000 lumens from one component
Friday 3rd February 2012
Lam introduced one of the first fully-automated plasma etching systems for semiconductor manufacturing in 1981
Friday 3rd February 2012
The supplier of high performance analogue semiconductor solutions is launching a new 1.2 W gallium arsenide power amplifier which boasts high linearity
Friday 3rd February 2012
The firm's gallium arsenide space solar cells, have now reached an efficiency of up to 28 percent. The firm says this makes them more than twice as efficient as the solar cells currently used for roof installations
Info
Friday 3rd February 2012
The firm's foundry services, include high-efficiency and low-noise gallium arsenide processes and 0.25 µm gallium nitride on silicon carbide services
Friday 3rd February 2012
It's a good thing then, that the firm has not put all its egg in one basket, as it is also investing in silicon carbide power devices
Friday 3rd February 2012
The new LUXEON H makes it possible to develop cost effective, compact LED bulb solutions for space constrained bulbs like GU10s and candelabra bulbs
Thursday 2nd February 2012
The new device launched by the company has an LNA which uses proprietary gallium arsenide pHEMT technology. It enables high performance navigation functionality in smart phones and tablets
Thursday 2nd February 2012
The acquisition will provide Soitec access to specific equipment necessary to deliver its LED strategy. It will also support manufacturing ramp up of its new Plug&Sun stand-alone mini solar tracker system
Thursday 2nd February 2012
Industry experts from EPC have published a new textbook which will enlighten power system design engineers on the theory and applications for gallium nitride transistors
Info
Thursday 2nd February 2012
The firm's technology is a fresh approach to increasing the amount of light created at the very heart of a white high brightness nitride-based LED
Thursday 2nd February 2012
The efficiency of CIGS modules from the Manz CIGSfab is nearing the lab values attained by ZSW. The CIGS “innovation line” acquired from Würth Solar is also accelerating technological development
Thursday 2nd February 2012
Advancement in R&D and manufacturing efficacy is accelerating the advancement of CIGS thin film technology
Thursday 2nd February 2012
Eleven CLEANSORB waste gas treatment systems will be used at Aixtron's R&D centres for MOCVD equipment and processes in Germany and China
Thursday 2nd February 2012
The flexible low-side gate gallium nitride driver is suited for use with MOSFETs and GaN power field-effect transistors (FETs) in high-density power converters
Thursday 2nd February 2012
The developer of flexible CIGS solar panels has recruited the Executive Director of TFG Radiant Group, Ascent’s largest shareholder and its affiliates

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info