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Monday 13th February 2012
The global developer and manufacturer of industrial lasers is expanding its business
Friday 10th February 2012
The firm hopes its chips, some of which incorporate indium gallium nitride layers, to advance UV LED technology for the curing industry and provide cost-effective solutions
Friday 10th February 2012
The machine will be used for designing III-V component-based semiconductor devices
Friday 10th February 2012
The firm will present its financial status at a number of conferences in the United States and one in the UK
Friday 10th February 2012
The indium gallium nitride LED chip, developed with Verticle's patented copper substrate and chemical chip separation technology, is optimised for light extraction efficiency
Friday 10th February 2012
The plant will use Soitec’s Concentrix fifth-generation III-V multi-junction CPV systems
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Friday 10th February 2012
The firm will to supply 500,000 TIE (2-inch equivalent) of 6-inch diameter c-plane sapphire cores, which will be used to produce high quality sapphire substrates for the HB-LED industry
Friday 10th February 2012
The new agreement is with the firm's largest customer for large-diameter (classed as 6- and 8-inch) wafers
Friday 10th February 2012
He has been elected to membership in the National Academy of Engineering. He oversees research using MOCVD of III-V semiconductors to explore applications in lasers, quantum dots and other optical structures
Thursday 9th February 2012
After a banner year in 2010 and a fast start to 2011, GaAs device revenue growth slowed, maintaining a historical average of six percent
Thursday 9th February 2012
The firm's LED MR16, built on its breakthrough gallium nitride on gallium nitride technology, is superior to halogen
Thursday 9th February 2012
A new agreement with MSFL , one of China’s main non-banking financial institutions, will enable Aixtron to promote the leasing of its MOCVD equipment to customers across China
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Thursday 9th February 2012
The firm's latest Acrich2 will enable customers to lower carbon dioxide emissions whilst reducing their electricity bills
Thursday 9th February 2012
The French firm has been assessed the global number one for supplying the military with cooled MCT infrared detectors, critical scanning and staring arrays
Thursday 9th February 2012
The new subsidiary will provide technical product support and regional systems solution development expertise in a number of areas including silicon carbide based power devices
Thursday 9th February 2012
A new technique using cadmium selenide quantum dots holds promise for better understanding of brain disorders
Wednesday 8th February 2012
The firm says this certification reinforces its strong commitment and support from its management and its staff to minimising environmental impact
Wednesday 8th February 2012
The new tool also optimises footprint in the fab and is claimed to deliver 55 percent higher wafer output for every square metre of cleanroom space compared to competitive offerings
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Wednesday 8th February 2012
The company has recently qualified the TurboDisc K465i GaN MOCVD System for high-volume production of high brightness LEDs at its state-of-the-art manufacturing facility in Taiwan
Wednesday 8th February 2012
Cree's new silicon carbide device platform is claimed to deliver twice the lumens-per-dollar of other LEDs and feature the highest performance and efficacy in the industry
Wednesday 8th February 2012
Key applications of the silicon carbide power devices include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating
Wednesday 8th February 2012
The firm is already producing 6-inch and 8-inch sapphire wafers, which set the stage to support the manufacture of LED-based general lighting
Wednesday 8th February 2012
The SSJHB12R085-1 board shows the operation of the firm's silicon carbide JFETs in a cascode half-bridge configuration
Wednesday 8th February 2012
The firm is launching a new video segment as part of its Different View campaign on JDSU.tv.

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