Loading...
News Article

Advantech announces new GaN Amplifier For Radars

News

Second generation 1kW X-band pulse SSPA designed to reduce power consumption and operating costs

Advantech Wireless has announced recently the release of its second generation GaN 1kW X-band pulse amplifier designed for Radar Systems.

The new 1kW X-band Solid State Pulse Amplifier (SSPA) is fully integrated and operates over the band of 8.9 "“ 9.6 GHz.

Features include a duty cycle monitor and pulse width monitor to ensure trouble free operation. The SSPA is designed to replace aging traveling wave tubes and Klystrons with advanced solid state technology.

Second Generation GaN technology reduces power consumption and operating costs due to its very high reliability, according to the company. Because of the system's linearity, the amplifier also produces a cleaner pulse, resulting in better range and resolution of the radar system.

"The advantage of solid state design over tubes and klystron technology is that this technology is much better suited for mobile radar applications," said Cristi Damian, Advantech Wireless VP, business development.

"These new GaN based Solid State Pulse Amplifiers for Radars exhibit very high spectral purity, linearity, and low phase noise. The radar pulse processing allows for very high pulse fidelity and sharpness, which translates in longer ranges, and higher detection capabilities."

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website