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Infineon highlights power portfolio at APEC 2018


Technologies based on advanced GaN, SiC and Si will share the spotlight

From March 4-8, 2018, Infineon will showcase energy-efficient, reliable and cost-effective semiconductor system solutions that contribute to a better future. The exhibit (Booth 701) takes place at the Henry B. Gonzalez Convention Centre, San Antonio, Texas.

Exhibits and demonstrations will highlight the growing reliability and market maturity of wide-bandgap power technologies, as well as continued improvements in industry mainstay silicon-based MOSFETs and IGBTs.

Infineon will be showing new XDP family digital controllers, intelligent power modules and audio drivers. Also on display are GaN-based boards for telecom, server and consumer electronics applications, SiC MOSFETs and diodes, and automotive-qualified inverter modules.

Infineon will also participate in 15 sessions and seminars during APEC, including:

Power Semiconductors for Traction Inverters in Vehicles "“ from Discretes to Power Modules, from Silicon to Wide Bandgap Devices (A. Christmann, D. Levett)

Gate Driver Design for IGBT and SiC based Power Devices and Modules (D. Levett)

Latest Advancements in Device and Package Technology for High Power, High Frequency Switching Device (Co-Chair: T. McDonald)

GaN vs. SiC vs. Si for Next Generation Power Devices (G. DeBoy)

Modeling & Simulation (Chair: W. Moussa)

GaN Device Opportunities and Challenges (Co-Chair: T. McDonald)

Reliability and Ruggedness "“ How to Address These Challenges in Wide Bandgap Semiconductor Devices (Co-Chair: T. McDonald)

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