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Monday 20th February 2012
The investment will fuel new CIGS solar plants and the growth follows on the heels of recent projects and milestones
Monday 20th February 2012
The firm's latest module uses the firm's indium gallium phosphide HBT technology
Monday 20th February 2012
Subsequent construction phases are planned for the next 7-10 years and will ultimately expand the company’s space to include approximately 300,000 square foot
Monday 20th February 2012
Five European installations contribute up to 76 percent in savings. The completed installations which will showcase sustainable U.S. building products are expected to be unveiled throughout 2012
Monday 20th February 2012
The Japanese headquartered CIS thin-film solar module manufacturer supplied its products to the power plant through Meidensha Corporation
Monday 20th February 2012
Results indicate that manganese doped zinc sulphide is paramagnetic, meaning it is only attracted when in the presence of an externally applied magnetic field
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Friday 17th February 2012
This marks the first agreement between the two companies and the first purchase of thin film CIS technology in NRG Solar’s history
Friday 17th February 2012
Apparently, yes. A new low refractive index silicone encapsulating material improves the efficiency of LED light transmission by greatly reducing gas permeability
Friday 17th February 2012
The corporate vice president of RFMD's Compound Semiconductor Group (CSG) is retiring
Friday 17th February 2012
These compact and efficient indium gallium phosphide MMPAs are suited to Quad-Band GSM/EDGE and dual-band WCDMA/LTE applications
Wednesday 15th February 2012
The LED upgrade is estimated to deliver 70 percent in energy savings
Wednesday 15th February 2012
The market for gallium arsenide-based PAs will continue to grow in more demanding applications and more sophisticated smartphones
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Wednesday 15th February 2012
The firm's next-generation LED module family supports 230 V input
Wednesday 15th February 2012
A new Thermal Infrared Sensor (TIRS), which incorporates gallium arsenide chips, will take the Earth's temperature with a new technology that applies quantum physics to detect heat
Wednesday 15th February 2012
The devices are manufactured using the firm's advanced indium gallium phosphide HBT MMIC technology
Wednesday 15th February 2012
The recent appointment of John F. O'Donnell will enable Opel to comply with the 25% Canadian residency requirement for the Board of Directors
Tuesday 14th February 2012
The new accreditation will leverage the firm's ability to provide higher quality lasers which are mainly based on a gallium arsenide platform
Tuesday 14th February 2012
The firm has suffered from reduced "Defence and Aerospace" and the "Networks" product demand. Revenues for these sectors were down 9% and 4% respectively from 2010 to 2011
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Monday 13th February 2012
DenBaars has been recognised for his contributions to gallium nitride-based materials and devices for solid state lighting and displays
Monday 13th February 2012
The new aluminium indium gallium phosphide LD provides high power single-mode 660nm output with a built-in photodiode for use by system designers and OEMs
Monday 13th February 2012
The developer of high efficiency III-V multi-junction cells has closed a Series D financial round from current investors with an additional strategic investment and partnership from IQE
Monday 13th February 2012
The LED developer will use the cash to accelerate research, development, and production of LED chip and packaging technology for general illumination applications
Monday 13th February 2012
The global developer and manufacturer of industrial lasers is expanding its business
Friday 10th February 2012
The firm hopes its chips, some of which incorporate indium gallium nitride layers, to advance UV LED technology for the curing industry and provide cost-effective solutions

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