GaN Systems launches Highest Rated transistor
120A, 650V GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems
GaN Systems has announced the 120A, 650V GaN E-HEMT, which offers twice the current capability of its highest rated current part, allowing customers to double the power processing for the same volume.
The product will be showcased at the upcoming Applied Power Electronics Conference & Exposition (APEC) in San Antonio, Texas on March 4-8, 2018 .
Gan Systems' 120 A, 650 V GaN E-HEMT is designed to increase the power density of 20 to 500 kW power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives.
The product (GS-065-120-1-D), sold as a die to customers building modules, is the lowest RDS(on), highest current 650 V GaN HEMT in the power semiconductor industry. Modules are an important form factor in high power electronics constituting up to 40 percent of the market based on form factor. Customers will use this die product in half-bridge, full-bridge, and six pack module topologies to create enhanced, high-power designs.
"This is the most pivotal GaN product on the market to be optimised for modules and is compatible with both embedded and traditional module technology," stated Jim Witham, CEO of GaN Systems.
"As an extension of our flagship product, it encompasses all the benefits of GaN technology and our approach to GaN power transistors "“ ease of use, high power density, and high efficiency "“ enabling power systems that are smaller in size and lower cost with unprecedented power levels."
