GaN Systems announces Record-Setting Transistor
100V/120A GaN-on-silicon transistor is 2.4 times to 4.6 times the current rating of other high current GaN devices
At the Applied Power Electronics Conference & Exposition (APEC) in San Antonio, Texas 4-8th March, GaN Systems has unveiled what it claims is the industry's highest current and power efficient 100 V GaN power transistor, the 100V, 120A, 5mΩ GaN E-HEMT device [GS-010-120-1-T].
It is 1.3 times the current rating of GaN Systems' own 90A part and 2.4 times to 4.6 times the current rating of other high current GaN in the industry.
The GS-010-120-1-T is an enhancement mode GaN-on-silicon power transistor that uses all of the die design and packaging advantages delivered from GaN Systems.
The transistor is suitable for 48 applications in the automotive, industrial, and renewable energy industries which require power systems with high power levels in smaller size form factors.
The transistor is footprint-compatible with GaN Systems' 100 V, 90 A GaN E-HEMT (GS61008T), thereby enabling customers to add further power by substituting the GS-010-120-1-T without changing their board. Increasing the current capability in the same size package allows customers to effectively increase the power by 33 percent for the same system volume.
"Our technology roadmap is positioned to deliver to the growing need of best-in-class GaN technology solutions in 100 V as well as 650 V applications," stated Larry Spaziani, VP, sales and marketing for GaN Systems.
"The new 100 V, 120 A GaN E-HEMT - along with our recently announced 650 V, 120 A GaN E-HEMT - are among a significant number of recent high-performance GaN transistors and solutions we have introduced. Our intention, as the world's leader in GaN power semiconductors, is to continuously provide products designed to exceed power system efficiency and reliability requirements in today's most demanding applications."
