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Friday 10th June 2011
In its collaboration with Interoute, Infinera which uses indium phosphide technology in its PICs, won the award for its contribution to high capacity European networks.
Friday 10th June 2011
Mary Petrovich and Robert Switz are experienced corporate executives, Appointed to GT Solar Board of Directors
Friday 10th June 2011
The repurchase of up to 15 million of the company’s ordinary shares has been authorised and should not exceed $500 million of its shares in the aggregate.
Friday 10th June 2011
The 976nm laser has a specially tailored mini-bar architecture where the optical parameter of the emission fits into the 200 µm fibre with the most simple and inexpensive optics.
Friday 10th June 2011
The smartphone market is expected to grow more than four times the rate of the overall mobile phone market in 2011 and shipments of smartphones should approach one billion in 2015.
Friday 10th June 2011
The MESSENGER probe which incorporates gallium arsenide multi-junction solar cells is able to operate in extreme temperatures and will orbit 730 times around Mercury for a year.
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Thursday 9th June 2011
The firm’s has so far produced enough cadmium telluride solar modules to power almost 2 million households with electricity. The firm has also started manufacturing modules in Germany ahead of schedule.
Thursday 9th June 2011
The Chinese university’s first Aixtron epitaxial growth system for gallium nitride LEDs is a 3x2-inch CCS system and was chosen for its versatility and low material consumption.
Thursday 9th June 2011
The firm which uses a patented III-N PVDNC process, is also seeking partnerships with bulk aluminium nitride materials developers who are interested in improving the optical properties of their materials.
Thursday 9th June 2011
The “GRATE” multiyear program will develop up to 500GHz devices and employ the use of grating masks combined with conventional photolithography.
Thursday 9th June 2011
The luminaires from LI-EX employ 15,000 cold-white Golden Dragon Plus LEDs and 50,000 warm-white TopLEDs in the entrance area of the new "Stachus Passagen" in Munich.
Thursday 9th June 2011
The firm has added a rugged assembly specifically engineered for high throughput in production test applications in the wireless infrastructure market.
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Thursday 9th June 2011
The US DOE has awarded a total of $14.8 million to accelerate the adoption of technologies that reduce costs and enhance product quality in SSL lighting. Other recipients include Cree, Lumileds, Soraa, Moser Baer and three US universities.
Thursday 9th June 2011
The Smart Lighting ERC at Rensselaer Polytechnic Institute has engaged key industrial partners including Epistar and Osram to foster and guide LED innovations.
Wednesday 8th June 2011
The firm says its NPA1003 GaN-on-Silicon MMIC enables the world’s smallest 5W 20-1500 MHz PA solution.
Wednesday 8th June 2011
The aim of the visit was for the US to become acquainted with Russian industry innovation and to search for possible ways to implement joint projects in energy and energy efficiency.
Wednesday 8th June 2011
The firm’s gallium nitride based products continue to advance power transistor technology to enable next-generation pulsed radar and other mission-critical systems.
Wednesday 8th June 2011
The firm will showcase its expanded power transistor family and military-grade microwave amplifiers and subsystems from newly acquired AML Communications.
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Wednesday 8th June 2011
The 65V gallium nitride process succeeds the firm’s GaN1 process for 48V and enables miniature, 0.5kW power devices with high operating efficiency for L- and S-Band military and civilian radar applications.
Wednesday 8th June 2011
The firm’s cadmium telluride series 3 modules comply with the MCS rigorous international standards to ensure that end-customers in the UK have assurance of excellent quality.
Wednesday 8th June 2011
The firm’s AWC6323 indium gallium phosphide dual-band power amplifiers enable the Droid Charge, Samsung’s first 4G LTE smartphone.
Wednesday 8th June 2011
The high power, high gain devices include Toshiba’s gallium nitride amplifier for satcom applications to support VSAT.
Wednesday 8th June 2011
The highly integrated chipsets, which employ the firm’s 0.15µm gallium arsenide technology, optimise each front end component for next-generation high-capacity 3G/4G radios using complex modulation schemes.
Wednesday 8th June 2011
The 3MW system for the supermarket based in Belgium consists of over 17,000 copper indium gallium diselenide (CIGS) solar modules covering 34,000 square metres of roof space.

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