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Wednesday 3rd November 2010
The firm says its GEMStar Atomic Layer Deposition (ALD) benchtop research system has the flexibility to deposit atomically thin layers of material on “virtually any substrate”. Potential applications include solar, space science, environmental and semiconductor.
Wednesday 3rd November 2010
The new metalorganic precursor plant in Korea will be located in Cheonan, approximately 85 kilometers south of Seoul.
Wednesday 3rd November 2010
The firm is to expand its sensors, RF components and power management device manufacturing capability. Processes will also include a range of analogue and high performance passive components including Schottky diodes.
Wednesday 3rd November 2010
The firm says its DOW POWERHOUSE Solar Shingle is the first to obtain the Underwriters Laboratories (UL) safety mark.
Wednesday 3rd November 2010
The $2 million dollar award from the U.S. Naval Research Laboratory (NRL) will be used to create new high-performance S-band low noise amplifiers (LNAs) and high performance amplifiers (HPAs).
Wednesday 3rd November 2010
The firm says only four OSTAR Lighting Plus units are needed to replace a frosted 100 W incandescent lamp with a color rendering index of 80.
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Tuesday 2nd November 2010
AIXTRON announced today a new order for MOCVD reactors from Semi Materials Co. Ltd., a company engaged in the development of photovoltaic energy technologies. The order comprises five AIX 2800G4 HT deposition systems in a 11x4-inch wafer configuration.
Tuesday 2nd November 2010
Efficient Power Conversion Corporation (EPC) have announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaNTM) transistors on its web site.
Tuesday 2nd November 2010
TriQuint Semiconductor, RF products manufacturer and foundry services provider, has released a new state-of-the-art gallium nitride (GaN) power amplifier with high power and efficiency for defense and commercial communications.
Tuesday 2nd November 2010
Kopin Corporation today reported financial results for the three and nine months ended September 25, 2010.
Tuesday 2nd November 2010
USHIO America, a provider of specialty and general illumination lighting solutions as a wholly owned subsidiary of USHIO Inc, today announced that the company has started marketing the world’s first 6-inch full-field projection exposure system for manufacturing LED chips in the US.
Tuesday 2nd November 2010
Cree, Inc. announces the commercial availability of new levels of performance for XLamp® XP-E & XP-C Color LEDs.
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Tuesday 2nd November 2010
RF Micro Devices, Inc. a global leader in the design and manufacture of high-performance semiconductor components and compound semiconductor technologies, today announced it will showcase the Company's industry-leading high-performance RF components at electronica 2010, in Munich from November 9 to November 12, 2010.
Tuesday 2nd November 2010
Cree announces the addition of 80, 85 and 90 color rendering index (CRI) options to its XLamp® XP-G and XP-E warm white LEDs. Many lighting applications, such as retail, medical and architectural, require high color accuracy to properly render object colors.
Tuesday 2nd November 2010
EV Group today announced that the company witnessed a more than 20-percent increase in overall revenue during fiscal 2010, ended September 30. EVG attributes this growth, in large part, to continued demand for equipment used in advanced manufacturing of 3D ICs, CMOS image sensors and MEMS devices.
Monday 1st November 2010
The firm's Gallium arsenide (GaAs) substrate revenue constituted the majority of sales in the last quarter at $19.2 million.
Monday 1st November 2010
Researchers from the University of North Carolina, led by Jay Narayan have integrated gallium nitride with silicon as a material for electric grids.
Monday 1st November 2010
For the nine months ended October 2, 2010, net sales for the firm totaled $156.5 million.
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Monday 1st November 2010
The agreement will involve collaborating with Taiwanese industries in the semiconductor, solar energy and TFT-LCD manufacturing sectors.
Monday 1st November 2010
The firm says its flexible CIGS modules, suited to rooftops, are the first to pass the IEC61646 and 61730 certifications.
Monday 1st November 2010
The strong demand for pulsed and high power lasers are the main increase in the sales and gross margin increasing to 50%.
Friday 29th October 2010
Year over year, the net income increase was primarily driven by higher module production, lower module cost per watt and increased system sales.
Friday 29th October 2010
Gallium arsenide (GaAs) substrate revenue was $19.2 million, Indium phosphide (InP) substrate revenue was $955,000 and Germanium (Ge) substrate revenue was $2.3 million for the third quarter of 2010.
Friday 29th October 2010
The overall objective of the project is to develop a cost-effective and reliable integration of advanced SiC and GaN semiconductors in the European power microelectronics industry.

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