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Transphorm Announces first 600V GaN Transistor in TO-247

Device enables up to 3kW inverter designs and titanium class power supplies without need to parallel transistors

Transphorm has announced at APEC 2015 that it is offering engineering samples of its TPH3205WS transistor, the first 600V GaN transistor in a TO-247 package.

Offering 63mΩ R(on) and 34A ratings, the device uses the company's Quiet Tab source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications. This new device extends Transphorm's EZ-GaN product portfolio to now support PV inverter designs with power levels ranging from a few 100 watts (micro-inverters) to several kilowatts (residential central inverters).

At its APEC booth, Transphorm will be showing a live demo featuring a 2.4kW, bridgeless totem-pole PFC exhibiting near 99 percent PFC efficiency at 100kHz operation. The totem-pole PFC, when combined with a GaN-based dc-dc conversion stage, enables a greatly simplified 80 PLUS titanium power supply design providing power densities unachievable with Si-based designs, according to the company.

In 2009, Transphorm was the first company to overcome and demonstrate reliable and stable on resistance across the full range of switching voltages from dc to 400V. This newest device continues the company's achievement in this area with an R(on) increase under switching of only 5 percent at 400V, compared to other competitively rated devices with an almost 90 percent increase. Additionally, Transphorm will display a static demo of the TPH3205WS used in a 3kW inverter showing test results at 100kHz and a peak efficiency of 98.8 percent, and over 99 percent at 50kHz.

"Transphorm's increased market footprint with this new higher-current GaN product, along with its access to high-quality, high-scale foundry manufacturing, enables us to meet growing demand from global customers," said Primit Parikh, Transphorm's President and Co-Founder.

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