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Wednesday 10th November 2010
The firm’s latest products are targeted at applications include cellular infrastructure, wireless backhaul and other high-performance wireless systems.
Tuesday 9th November 2010
Strategy Analytics predicts that the GaAs and GaN based MMIC and hybrid amplifier market is estimated to reach $178 million in 2014.
Tuesday 9th November 2010
The new facility based in Batavia responds to increasing demand for high quality, high yield large diameter sapphire wafers worldwide.
Tuesday 9th November 2010
The CIGS module supplier has secured the investment from Walsin Lihwa to construct a solar fab with 140 employees in Leipzig, Germany.
Tuesday 9th November 2010
The 120V LMR4 LED module has achieved California Title 24 registration ; this will simplify LED fixture design and speed up time to market.
Tuesday 9th November 2010
AIXTRON AG today announced a new order for a Black Magic Plasma Enhanced CVD (PECVD) system from DTU Danchip and DTU Nanotech at the Technical University of Denmark in Lyngby, Denmark.
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Tuesday 9th November 2010
RFMD says its GaN high-efficiency RF3932 power transistor delivers superior performance over GaAs and silicon technologies.
Tuesday 9th November 2010
The firm’s cross-industry CIGSolar product is expected to advance at a tremendous rate towards the commercial market.
Tuesday 9th November 2010
The service of complaint against Harvatek was filed on November 9, 2010.
Tuesday 9th November 2010
The firm’s Xtrinsic 77 GHz silicon germanium chipset advances automotive safety by enabling vehicles to sense potential crash situations.
Monday 8th November 2010
The firm’s new TOPLED Compact 4520 LED is claimed to be the first for this application to have a UX:3 chip.
Monday 8th November 2010
The firm has reached a critical milestone towards the commercialization of PicoP display engines using direct green lasers. This is expected to offer significant commercial advantages in price, size, power, and performance over conventional frequency doubled green lasers.
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Monday 8th November 2010
The ultra-high voltage Silicon Carbide (SiC) thyristors for use in power electronics for Smart Grid applications are targeted at US researchers.
Friday 5th November 2010
The firm expects to continue growing the business as supply constraints ease in its Optical Communications and Test and Measurement businesses. It is also further investing in incremental capacity for Optical Communications.
Friday 5th November 2010
Yokogawa's AQ6370C combines exceptional accuracy and resolution with ultra-high dynamic range, comprehensive interfacing and ease of use.
Friday 5th November 2010
Operating margin was 40 % and diluted earnings per share nearly doubled sequentially to $0.35. The firm also announced that it will open manufacturing plants in Illinois & Malaysia.
Friday 5th November 2010
For Fiscal Year 2010, the company’s revenue increased by 34% over FY 2009 and revenue guidance for the next quarter has been increased to $330 to $335 million.
Thursday 4th November 2010
The two 2 inch reactors have increased the Chinese firms HB GaN LED epiwafer capacity.
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Thursday 4th November 2010
MarketsandMarkets report ‘Thin Film PV- Advanced Technologies and Global Market (2008-2015)’ says that the CIS/CIGS market is expected to grow with a maximum CAGR of 43.9% from 2010 to 2015.
Thursday 4th November 2010
The company will be showcasing LEDs, infrared and laser components for a wide variety of applications in the commercial, industrial and residential sectors at the conference in Germany.
Thursday 4th November 2010
The RFSA2614 and RFSA2624 modules target high-performance wireless applications, including 3G/4G/LTE Cellular infrastructure, wireless backhaul and WiMAX.
Wednesday 3rd November 2010
Fast moving sector starts discussions on possible common material characteristics, automation requirements to be ready for the future.
Wednesday 3rd November 2010
The Boeing wholly owned subsidiary shipped the multi-junction gallium arsenide (GaAs) space-based solar cell solar cell just last week.
Wednesday 3rd November 2010
The Center for High Technology Materials at the university will utilize the Molecular Beam Epitxy (MBE) system in the development of next generation infrared detectors.

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