220 GaN MOCVD Reactors To Be Installed In 2015
Due to the major aggressive expansion plans of some Chinese LED companies, IHS forecasts that 220 GaN reactors will be installed in 2015, according to the latest data in the IHS LED Intelligence Service.
It forecasts that the large number of MOCVD tool shipments will result in a 28 percent increase in the level of excess supply in the LED market.
This new capacity expansion is slightly different from what happened several years ago, when large numbers of LED companies in China purchased government-subsidised tools, says Alice Tao, senior analyst.
IHS forecasts that this year only large and publicly traded companies will purchase MOCVD phase epitaxy tools. The graph above shows the largest 20 MOCVD customers, by the end of 2014: eight of them were Chinese companies and three of those companies - Sanan, HC Semitek and Aucksun - have announced expansion plans for 2015.
2-inch equivalent GaN LED wafer capacity share by the end of 2015
Most of the new reactors purchased in 2015 will be new generation tools, providing double capacity per reactor. Sanan is projected to lead in 2-inch equivalent wafer capacity share, by the end of 2015; although, Epistar would still own the largest number of MOCVD tools. The largest three Chinese companies will achieve a combined market share of 27 percent in 2015.
AngelTech Live III: Join us on 12 April 2021!
AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!
Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.
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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.
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