Info
Info
News search:

< Page of 578 >

News


Thursday 30th September 2010
The EVG301 system will enable void-free wafer bonding of III-V compound semiconductor materials on silicon wafers with high-quality surface preparation.
Thursday 30th September 2010
The acquisition of Galaxy for upto $14.15m in cash will expand IQE’s Antimonide portfolio. This sees IQE intending to place 65 million shares to raise £20.8 million gross for the purchase, and for capacity expansion and strengthening of the balance sheet.
Thursday 30th September 2010
The Russian based firm will use the two MOCVD systems for gallium nitride (GaN) LED production.
Thursday 30th September 2010
The MBE foundry services should leverage the firm’s position in compound semiconductor technology and manufacturing to deliver flexible MBE-related epitaxial products and services.
Thursday 30th September 2010
The Consortium will provide ongoing national organizational structure and guidance in the process of evaluating solid-state street lighting technologies meant for public streets and other public areas.
Thursday 30th September 2010
One of the facilities, a European Solar Solutions Application Center, will seek to advance the company’s technology for use in photovoltaic cells. Construction is expected to begin later in 2010.
Info
Wednesday 29th September 2010
The SU1024LDH2 is ideal for SWIR imaging applications, such as high speed absorption or emission spectroscopy for use in combustion research or for agricultural/food product inspection.
Wednesday 29th September 2010
Nanomarkets’ latest report, “Zinc Oxide Markets, 2010 and Beyond” says that by 2015, the largest single segment of the Zinc Oxide electronics market will be Zinc Oxide LEDs. ZnO offers several advantages such as low cost compared with more traditional LED materials such as GaN and GaAs.
Wednesday 29th September 2010
Developed in collaboration with Future Lighting Solutions, the eco-friendly downlights will replace MR16 halogen models.
Wednesday 29th September 2010
The agreement is with the Advanced Research Projects Agency – Energy (ARPA-E). The devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.
Wednesday 29th September 2010
The highly integrated XZ1001-BD consists of integrated transmit/receive switches, low noise amplifier, 6-bit phase shifter, 6-bit attenuator and driver amplifier.
Wednesday 29th September 2010
The new 89600B software provides R&D engineers performing signal and modulation analysis with a window into what's happening inside their complex wireless devices.
Info
Wednesday 29th September 2010
Option UNY is ideal for R&D and test engineers working on defense electronics and wireless communication systems.
Wednesday 29th September 2010
The firm will provide a full suite of Gallium Arsenide (GaAs) Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit.
Wednesday 29th September 2010
The new options for the firm’s X-Series deliver wider bandwidth, faster speed and more measurement capabilities.
Wednesday 29th September 2010
Appointed as Director to the Gas & Compound Semiconductor Service division, Higham has led design, business development and marketing efforts in a variety of semiconductor based components and processes.
Tuesday 28th September 2010
The two firms will work together to develop Copper Zinc Tin Sulfur selenide (CZTS) technology using inexpensive, earth abundant components. This should circumvent the need for cadmium which is toxic.
Tuesday 28th September 2010
The firm’s latest devices will be used for fast growing satellite and cable television markets and should reduce board footprint and customers' bill of materials.
Info
Tuesday 28th September 2010
The firm is using the new facility to expand its optical design and packaging expertise portfolio. This should leverage its local 'Optics Valley' education and workforce.
Tuesday 28th September 2010
Researchers from Ohio State University have found that adding manganese (Mn) to gallium arsenide (Gas) endows the material with magnetic properties. This could eventually enable integrated circuits to run on heat, rather than electricity.
Tuesday 28th September 2010
The firm’s latest variable gain control amplifiers are claimed to provide unprecedented levels of performance and integration at RF and IF Frequencies. The ADL52XX series combines multiple functions in single chip, achieving significant BOM savings and breakthrough radio performance.
Tuesday 28th September 2010
The RFUV5945A I/Q up-converter is ideally suited for a variety of end markets, including point-to-point microwave radio, military radio, VSAT, and test and measurement.
Tuesday 28th September 2010
The firm’s analyzer features industry’s first four-port 110 GHz single-sweep solution for millimeter-wave measurements.
Monday 27th September 2010
Technical session highlights include conferences on military applications, recent measurements taken of the Eyjafjallajökull volcano and a roundtable discussion on Optics and Photonics for Counterterrorism and Crime Fighting.

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info