Avago Technologies a supplier of analog interface components for communications, industrial and consumer applications, have announced a new family of high-brightness LEDs in ultra-small packages at the Combined Exhibition of Advanced Technologies (CEATEC) Japan 2010.
QD Laser, Inc., Fujitsu Limited, and the University of Tokyo today announced that, as part of the Green IT Awards 2010 granted by Japan's Green IT Promotion Council, they have been awarded the Ministry of Trade, Economy and Industry Minister Award in the category of
Ascent Solar Technologies, Inc., a developer of flexible thin-film solar modules, have announced that it has signed a distribution agreement with DisaSolar, a newly established subsidiary company of Megamark/DisaTech Group, who provide complete solutions in architectural, industrial and corporate signage in France and other European Countries.
Endwave Corporation, a provider of high-frequency RF devices and integrated subsystems, has announced its model EWH2001ZZ distributed power amplifier (PA) for commercial, industrial, and military applications from DC to 20 GHz.
Sodium (Na) is an important factor for the efficiency of CIS/CIGS solar cells. Sodium doped molybdenum layers can easily be integrated into the existing solar cell production process and guarantee stable and reproducible results.
Kyma Technologies, Inc., a supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is pleased to announce that Kyma has acquired from The Fox Group certain assets and intellectual property rights.
Hiden Analytical introduce the new QGA compact benchtop mass spectrometer configured for continuous real-time multi-species analysis of both gases and vapours in the pressure range from 2 bar to 100mbar absolute
EMCORE Corporation, provider of compound semiconductor-based components, subsystems, and systems for the fiber optics and solar power markets, have announced unaudited financial results for its third quarter and nine-month periods ended June 30, 2010.
Fujitsu Limited and Fujitsu Laboratories Ltd. have announced the development of a power amplifier using gallium nitride (GaN)(1) High Electron Mobility Transistors (HEMT)(2) that has achieved the world's highest output performance of 1.3W for wireless communications in the millimeter-wave W-band(3), for which widespread usage is expected in the future.
Lund (Sweden) based nanowire semiconductor LED developer GLO AB today announced the closing of an SEK 170 million investment round (approximately USD 25 million) and establishment of a California-based engineering center to supplement its current efforts in Sweden and Denmark. The Company also announced appointment of Fariba Danesh as its Chief Executive Officer.
AWR Corporation announced today the release and immediate availability of a new process design kit (PDK) supporting the Cree, Inc. high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process
Compound Semiconductor Technologies Global announces that it has completed the qualification of its Hamilton wafer fabrication plant, following the acquisition of the facility from Intense Ltd in January 2010.