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ON Semiconductor to show GaN-based converter at PCIM

Two-stage converter uses GaN HEMTs to achieve 95 percent efficiency

ON Semiconductor has announced that it will be showing its latest GaN technology at PCIM 2015, in Nuremberg, Germany next month.

One demo will be of a two-stage 240W converter that uses GaN HEMTs in both the PFC stage and in the primary side of the LLC stage. It achieves 95 percent peak efficiency with the NCP1397 LLC controller, NCP1654 power factor correction controller, and TPH3202PS or NTP8G202N GaN transistor switching devices.

PCIM Poster Dialogue Sessions will focus on the development of 650V Cascode GaN technology (by Charlie Liu), and 1 kW LLC resonant converter with HV GaN switches  (by Adam Vasicek).

The company will also be giving a presentation at PCIM called 'Advanced Silicon and GaN Power Technologies from ON Semiconductor for next generation applications in the Medium to High Voltage Range'.

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