New York Power consortium has potential to capture 10 percent of SiC market

If General Electric Co. and SUNY Polytechnic Institute's New York Power Electronics Manufacturing Consortium takes off, their manufacturing line could process 30,000 wafers a year, GE's Danielle Merfeld told the Northeast Semi Supply Conference this week at SUNY Poly campus.

Merfeld, who is leading GE's SiC program, said the facility would capture about 10 percent of the market for SiC power chips, which is about $150 million annually. Moreover, if needed, the consortium could double its capacity, she said. Any factory, however, would be built nearby to be close to the research done at GE Global Research in Niskayuna and at SUNY Poly.

GE and SUNY Poly announced the creation of the Albany consortium in July 2014 to commercialise GE's SiC technology for use in power electronics chips.The venture will invest over $500 million in the next five years. It is building a manufacturing line at SUNY Poly's Albany campus that is expected to be ready by 2017 and would serve a variety of industrial customers, including GE.

AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

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Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

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