EPC Introduces 100V monolithic GaN Half Bridge
EPC has announced the EPC2104, 100V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50 percent reduction in board area occupied by the transistors.
This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system.
The EPC2104 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density. The EPC2104 is ideal for high frequency DC-DC conversion and motor drive applications.
A 2in x 2in development board (EPC9040) is also available containing one EPC2104 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors.
The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.
