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MACOM to exhibit GaN range at IMS 2015

High linearity GaN-on-silicon, the first E-band SMD modules, and S-band GaN-on-SiC on show

MACOM, the US supplier of analogue RF, microwave and optical semiconductor device, has announced that it will be showing its advanced GaN RF product portfolio at IMS 2015 in Phoenix, Arizona, USA, May 19-21.

The portfolio includes the company's Gen4 GaN on Silicon process optimised for linearity; input matched GaN integrated amplifiers operating over multi-octave bandwidths; a compact, S-Band GaN on SiC pallet for air traffic control radar applications; the industry's first E-band SMD modules; a low noise amplifier in a police radar detector application; and a static multifunction phased array panel for civil and military radar applications.

Members of MACOM's product management, engineering and applications teams will be available at IMS to answer any inquiries or questions.

MACOM experts will also be participating in various sessions throughout IMS, including a workshop on current trends in GaN packaging and a technical session on AlGaN/GaN HEMT nonlinear model fitting.


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