25W GaN MMIC from Cree targets Ku-Band applications
Class A/B high-gain, high-efficiency power amplifier is based on a SiC substrate
Cree is now offering a 25W GaN HEMT-based MMIC power amplifier (PA) for 13.75 to 14.5GHz, 40V, Ku-Band applications.
The CMPA1D1E025F is a Class A/B high-gain, high-efficiency, 50Î© device built based on a SiC substrate.
According to Cree, GaN-on-SiC has superior properties compared to silicon, GaAs or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity.
This Ku Band MMIC is available in a 10-lead, 25-mm x 9.9-mm, metal/ceramic flanged package for optimal electrical and thermal performance.