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Thursday 25th February 2010
Annual report which provides a comprehensive overview of the company for the past year
Thursday 25th February 2010
Newly Renovated Orlando Hotel Boasts the Most Energy-Efficient Lighting in the Hyatt Family
Thursday 25th February 2010
TDI Wins $600,000 Maryland, USA Award To Boost Production Of SSL Materials
Thursday 25th February 2010
Honda has created a new solar panel which uses compound semiconductors in order to stabilise energy output.
Thursday 25th February 2010
Latest Soitec Acquisition Enables Innovative Commercial Solution for Utility-Scale CPV Project
Thursday 25th February 2010
Samsung Electronics Co., the world's largest flat screen TV maker, unveiled Thursday the world's first three-dimensional (3D) full high-definition (HD) televisions using light-emitting diodes (LED), as the company targets to sell 2 million units of 3D TVs worldwide this year, the company said.
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Thursday 25th February 2010
Company Honored at a Yale University Reception
Wednesday 24th February 2010
Competitively Priced Surface Mount LEDs Feature a Compact Footprint, Wide Viewing Angle and High Reliability
Wednesday 24th February 2010
AXT, Inc., a leading manufacturer of compound semiconductor substrates, today announced that Morris S. Young, chief executive officer, and Raymond A. Low, chief financial officer, will present at the Jefferies 4th Annual Global Technology Conference at the Mandarin Oriental Hotel in New York City on Monday, March 8th, 2010 at 1:30 pm ET.
Wednesday 24th February 2010
Keithley Instruments, Inc. (NYSE:KEI), a world leader in advanced electrical test instruments and systems, today introduced the Model 4225-PMU Ultra-Fast I-V Module, the latest addition to the growing range of instrumentation options for the Model 4200-SCS Semiconductor Characterization System.
Wednesday 24th February 2010
The new Yokogawa GS200 is a programmable DC voltage/current source that boasts high accuracy, high stability and high resolution.
Wednesday 24th February 2010
Next-generation professional digital displays are lightest and most energy efficient in the market, drastically reducing total cost of ownership
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Wednesday 24th February 2010
Plasma-Therm LLC, located in St. Petersburg, celebrated its one year anniversary last Friday with Florida Governor Charlie Crist and St. Petersburg Mayor Bill Foster.
Tuesday 23rd February 2010
Agilent Technologies Introduces Industry's First Single-Box Analyzer/Curve Tracer For 40-Amps/3000-Volt Power Device Evaluation
Tuesday 23rd February 2010
International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced the industry’s first family of commercial integrated power stage products utilizing IR’s revolutionary Gallium Nitride (GaN)-based power device technology platform. The iP2010 and iP2011 family of devices is designed for multiphase and point-of-load (POL) applications including servers, routers, switches and general purpose POL DC-DC converters.
Tuesday 23rd February 2010
The U.S. Defense Department approved two flexible solar module systems developed by Ascent Solar Technologies Inc. as compliant with ruggedized standards.
Tuesday 23rd February 2010
Design for E-beam (DFEB) Mask Technology Makes Advanced Photomask Production Practical
Tuesday 23rd February 2010
Infineon Drives Innovation in LED Lighting; New Off-Line LED Drive Design Provides High Efficiency and Exceptional Power Quality for Incandescent Bulb Replacement
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Tuesday 23rd February 2010
Lithography System Order for Use in Customer Development for HBLED Manufacturing With Commitment to Purchase Several Additional Sapphire Lithography Systems
Tuesday 23rd February 2010
RFMD has been awarded a new research and development contract worth £3.2 million from the US Department of Defense.
Tuesday 23rd February 2010
AXT, a leading manufacturer of compound semiconductor substrates, today reported financial results for the fourth quarter and fiscal year ended Dec. 31, 2009.
Monday 22nd February 2010
AIXTRON AG today announced that its next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities.

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