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Technical Insights


Wednesday 28th March 2012
Breaking the 200 lm/W barrier for the red LED will do far more than simply increase the efficiency of car brake lights. It will also improve the efficacy and colour quality of solid-state lighting sources as well as pico-projectors and yield a lighting product for greenhouses when combined with blue LEDs, says Martin Behringer from Osram Opto Semiconductors.
Tuesday 27th March 2012
Transistors built from GaN-on-silicon promise to grab a major share of the power device market, thanks to their combination of low cost and high performance. Converting their potential into success hinges on scaling production to large wafer sizes and employing excellent passivation techniques, two areas where they excel, according to EpiGaN founders Marianne Germain, Joff Derluyn and Stefan Degroote.
Friday 16th March 2012
Positive vibes abounded at day two of CS Europe, with industry leaders offering insights into novel lasers, GaN-on-silicon transistors and SiC power electronics.
Tuesday 13th March 2012
Insights from market analysts, details of the inroads of III-Vs into silicon CMOS and advances in LEDs, abatement and foundry services all featured on the opening day of CS Europe
Monday 12th March 2012
Miniature LED arrays produce incredibly bright, colourful displays that are suitable for many applications. Opportunities include exposing resists; confining and manipulating cells; and probing and controlling genetically targeted cells, says Jim Bonar from mLED.
Friday 9th March 2012
Biomedical diagnostics and next-generation optical data storage require ultra-fast bursts of blue and purple laser emission. Complex, cumbersome and bulky Ti:sapphire lasers are providing these pico-second pulses today, but it would be preferable to use a simpler, cheaper and far more portable GaN chip that we are now developing through a European future and Emerging technologies project, say Dmitri Boiko from CSEM.
Friday 9th March 2012
Surveillance is increasingly performed with unmanned aerial vehicles fitted with infrared imaging systems. These long-wavelength, high-performance detectors require substantial cooling and draw a lot of power from on-board batteries. But these demands could be reduced with Sofradir’s new generations of mercury cadmium telluride detectors that promise to operate at higher temperatures, thanks to improvements in passivation layers and device architectures. Richard Stevenson reports.
Friday 9th March 2012
GaN lasers perform at their best when grown on a flat native crystal that combines low dislocation densities with a high enough free carrier concentration to ensure a strong refractive index contrast between device and substrate. Making such a foundation in reasonable volumes with acceptable growth rates is tough, but we believe the most promising approach employs high nitrogen pressure and liquid gallium to form very high quality, free-standing crystals on an array of HVPE-grown seeds, says Michal Bockowski from the Institute of High Pressure Physics, Polish Academy of Sciences, in Warsaw.
Friday 9th March 2012
Forming double-heterostructure FETs with an AlGaN barrier improves electron confinement, leading to a higher drain bias.
Friday 9th March 2012
A mix of modelling and experiment creates a strong case for carrier asymmetry as a primary cause of LED droop
Friday 9th March 2012
Purified hydrogen is an essential ingredient in the MOCVD processes used to manufacture LEDs, power devices and photovoltaics.Moves toward larger reactors and bigger wafers are increasing the demand for more and more ultra-pure hydrogen from increasingly reliable, compact sources. Fulfilling this need is a novel palladium technology developed by Power and Energy, says the company’s Stuart Bestrom
Friday 9th March 2012
Calculations unveil two problems with the Auger theory for LED droop. This recombination mechanism is far too weak, and it has a temperature dependence that fails to tally with experimental results
Thursday 8th March 2012
III-V MOSFETs entering the third dimension, quantum-well FETs with low power consumption and GaN diodes and transistors that combine high breakdown voltages with tiny leakage currents all featured at the recent IEDM meeting. Richard Stevenson reports.
Friday 24th February 2012
Poor light extraction holds back LED performance. But this can be avoided by inserting a patterned dielectric stack on top of the device, an approach that has the added bonus of controlling the far-field emission pattern, says Ahmed Noemaun from Rensselaer Polytechnic Institute.
Friday 24th February 2012
The goal of every HBLED manufacturer is more light for less money. With strong competition and numerous technology hurdles it is vital that all manufacturing steps are pushed. Mark Dineen, Product Manager (HBLED) at Oxford Instruments Plasma Technology discusses how optimised plasma etching offers several ways to improve device output and reduce costs providing a double windfall.
Friday 24th February 2012
There is now little headroom left to improve the efficacy of the conventional white LED. But major gains in efficiency are possible by replacing the traditional combination of a blue chip and yellow phosphor with a monolithic,multiple wavelength source. One great way to do this is to work with nano-scale pyramids, say Samsung’s Taek Kim, Joosung Kim and Moonseung Yang.
Friday 24th February 2012
As a suppler of metal organic raw materials to companies providing MOCVD precursors, Albemarle had been quietly serving our industry for many years. Now the multi-national chemicals specialist is coming into full view by launching its PureGrowth line, a move designed to fulfil the hike in demand for materials for LED manufacturing. Richard Stevenson quizzes Albemarle’s Vice President, Performance Catalyst Solutions, Amy Motto, and the company Business Development Manager, Electronic Materials, Al Knight, about this venture.
Friday 24th February 2012
Expanding services in the pure-play market - WIN Semiconductors could easily rest on its laurels after grabbing the lion’s share of the GaAs foundry business. But that’s not the plan for this Taiwanese chip maker: Instead, it is expanding and refining its portfolio of GaAs technologies; it is preparing to introduce new GaN, packaging and copper bumping technologies; and it is getting ready to make its debut on the stock exchange. Richard Stevenson reports.
Friday 24th February 2012
InGaAs HEMTs form two-stage gain blocks delivering 9 dB of gain while consuming just 20 mW
Friday 24th February 2012
Inverted epitaxy boosts LED efficiency - Light generation in traditional LEDs is hampered by poor hole doping and an internal electric field that suck carriers out of the active region. The solution: Begin device growth with the p-type layers, because this bolsters carrier capture in the quantum wells and unlocks the door to polarization-induced hole doping, says Crosslight’s Z.Q. Li.
Friday 24th February 2012
The pairing of InGaAs and GaAsSb combine to create detectors with efficiencies exceeding incumbent designs
Friday 24th February 2012
Growth on a-plane sapphire enables nitride cells to deliver record-breaking short-circuit current densities
Friday 24th February 2012
Semi-polar lasers don’t need electron-blocking layers to deliver high output powers in the green
Wednesday 8th February 2012
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