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Technical Insights


Tuesday 10th January 2012
This year's conference is building on the success of 2011 and has developed to a two day conference with the main theme of 'defining the next steps for the compound semiconductor industry' and includes a keynote speech from Robert Chau, Intel Senior Fellow and director of transistor research and nanotechnology in Intel¹s Technology and Manufacturing Group.
Wednesday 7th December 2011
Wrapping a dielectric around an indium gallium arsenide channel could hold the key to scaling ICs beyond the 14 nm node.
Monday 5th December 2011
Deposition of nitride epilayer stacks by MOCVD requires high temperatures and plenty of ammonia. But these downsides can be sidestepped with an alternative growth process called migration enhanced afterglow,which has been developed by Canadian start-up Meaglow. Richard Stevenson reports.
Monday 5th December 2011
Flat, stress-free substrates with great surface quality will help to drive mass adoption of solid-state lighting. Such platforms reduce the impact of edge effects, allow the MOCVD deposition process to run more efficiently and ultimately cut the cost of LED chips, says Rubicon’s Raja Parvez.
Friday 2nd December 2011
Guaranteed access to leading edge GaN component technology is essential to maintain a competitive space industry in Europe. So companies and institutions are working together to build their own reliable, non-dependant,manufacturing supply chain for fabrication of space compatible GaN microwave transistors and integrated circuits, says Andrew Barnes and Fabio Vitobello from the European Space Agency and Joachim Daeubler, Klaus Hirche, Jouni Laetti and Mirko Rostewitz from Tesat-Spacecom.
Thursday 1st December 2011
Keithley Instruments recently launched an electrical characterization tool that caters for the needs of producers of wide bandgap power electronics and high-brightness LEDs. David Ridsdale quizzes the company’s marketing director, Mark Cejer, about the capability of this new product.
Tuesday 29th November 2011
Calculations unveil two problems with the Auger theory for LED droop: This recombination mechanism is far too weak, and it has a temperature dependence that fails to tally with experimental results
Thursday 24th November 2011
Simulations hold the key to unlocking the potential of wideband gap semiconductor transistors with novel architectures, say Hugh Wong, Nelson Braga, Shiyang Tian and Ricardo Borges from Synopsys.
Thursday 3rd November 2011
Purchasers of power electronics want transistors and diodes that deliver SiC performance at silicon prices. Next year they should get their wish when MicroGaN launches a range of 600 V, GaN-on-silicon devices. Richard Stevenson investigates.
Wednesday 12th October 2011
Talk of a concentrating photovoltaic (CPV) market that is about to take off will court derision from some quarters, with sceptics arguing that they’ve heard it all before. But this industry has undoubtedly matured in recent times, and there is very good reason to believe that CPV deployments will rise and rise, offering a great opportunity for makers of triple-junction cells that can fulfil the wishes of their customers. Richard Stevenson investigates.
Wednesday 12th October 2011
Indium clustering in InGaN quantum wells stems from electron beam exposure, according to atom probe measurements
Wednesday 12th October 2011
Quantum dots enable long-wavelength telecom lasers to combine sufficient output with incredibly low noise figures
Tuesday 11th October 2011
To take nitride transistor speeds to a completely new level, researchers must work with novel designs employing either a new pairing of materials or the unconventional nitrogen-face, argue Dong Seup Lee and Tomas Palacios from Massachusetts Institute of Technology.
Tuesday 4th October 2011
Following several years of development with UMS and Fraunhofer Freiburg Institute, NXP is starting to launch a family of high-performance GaN-on-SiC power transistors that will complement its hugely successful silicon LDMOS products, says the company’s Director of Marketing for RF Power, Mark Murphy.
Tuesday 4th October 2011
The red laser is a great friend of the film buff. It has been the key ingredient for extracting the data from billions and billions of DVDs, and thanks to increases in output power, it promises to now enable the manufacture of brighter, more colourful displays, including three-dimensional ones employed in cinemas, says Modulight’s Marketing Manager Anca Guina.
Monday 26th September 2011
Causes of LED droop and the progress of green lasers were two of the big topics at this year’s nitride conference. Richard Stevenson reports.
Wednesday 21st September 2011
Intra-cavity frequency doubling creates 3 mm QCLs from the pairing of GaInAs and AlInAs
Tuesday 20th September 2011
Normally-off GaN HFETs deliver a drain current of 220 mA/mm when built on commercial, native a-plane substrates.
Monday 19th September 2011
InAlGaN barrier boosts ultra-violet LED output at high current densities
Monday 19th September 2011
Photochemical etching with potassium hydroxide creates LEDs with reduced strain and higher efficiencies.
Tuesday 16th August 2011
LEDs with a vertical geometry are promising candidates for deployment in solid-state lighting products because they can handle the high drive currents needed to deliver a high luminous output. Manufacturing this form of LED requires a wafer-to-wafer bonding process,which involves many variables that need to be optimised for the specific device design, say Thomas Uhrmann, Eric Pabo,Viorel Dragoi and Thorsten Matthias from EV Group.
Tuesday 16th August 2011
A hike in LED manufacturing yields can ensure profitable production of lower cost chips and spur the growth of solid-state lighting. One way for fabs to produce more die that are in-spec is to introduce inspection tools for various steps of the process, alongside software that collates all the data and pin points process issues, says KLA-Tencor’s Director of Product Marketing, John Robinson.
Monday 15th August 2011
Following years of quiet development, Solar Junction has recently shot to fame with recordbreaking triple-junction cells incorporating dilute nitrides. The next phase for the company is to ramp its manufacturing capacity and help CPV to carve out its own segment in the PV market. Richard Stevenson catches up with the plans of the Stanford start-up.
Monday 15th August 2011
An internationally diverse,well-attended exhibition at euroLED showcased the tremendous growth of LED lighting products for general illumination. Although these solid-state sources account for only a tiny fraction of total lighting sales,many conference speakers argued that far greater market penetration will follow once these products are far cheaper and deliver better colour quality. Richard Stevenson reports.

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