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Technical Insights


Tuesday 12th July 2011
Etching sapphire increases LED output through improvements in nitride film quality and light extraction.
Tuesday 12th July 2011
A multi-recessed gate boosts the breakdown voltage of a SiC MESFET, enabling it to deliver 8.9 W/mm at 2 GHz
Tuesday 12th July 2011
At 4 GHz, MOCVD-grown N-polar HEMTs on sapphire deliver the same power density as conventional Ga-polar equivalents
Wednesday 6th July 2011
Inserting microstructures within the epilayers of a nitride LED can boost dispersion and ultimately increase chip efficacy, says Optogan’s Lauri Knuuttila and Pekka Törmä.
Wednesday 6th July 2011
Calculations by Chris Van de Walle’s team from the University of California, Santa Barbara, (UCSB) expose two forms of indirect Auger recombination as the primary causes of LED droop
Tuesday 5th July 2011
In general, it has been a fairly good year for compound semiconductor shares, with many firms experiencing double-digit increases in value. But variations in market performance are huge: Fibre laser manufacturer IPG Photonics has more than tripled its share price in the last year, while LED chipmaker Cree has seen its share price plummet by nearly 50 percent. Richard Stevenson reports.
Thursday 30th June 2011
By the end of this decade SiC device sales will be netting a billion dollars and substrate revenues will be worth $350 million, according to market analyst Philippe Roussel from Yole Développement. He talks to Richard Stevenson about the chipmakers set to make the biggest splash and the type of substrate that they will be using.
Thursday 30th June 2011
Most of the LEDs that are made in China fall into one of two camps: either low performance, incredibly cheap emitters that backlight keypads and illuminate the likes of toys, children’s shoes and power indicators; or high-end power chips for general lighting that are fabricated through joint ventures with foreign LED manufacturers. Domestic chip production is ramping in both these sectors, contributing to overcapacity in the global market and driving down prices, reports Richard Stevenson.
Wednesday 29th June 2011
Today’s switch-mode power converters restrict the efficiency of solar systems and hybrid electric vehicles. One way to lift this barrier, while cutting the bill of materials at the system level, is to replace the silicon transistors with SiC bipolar equivalents that can deliver currents of up to 50A, argues Fairchild’s Anders Lindgren.
Wednesday 29th June 2011
The inaugural Compound Semiconductor Industry Awards were presented at the CS Europe Conference held in Frankfurt.
Tuesday 21st June 2011
The solar cell veteran found that the combination of a top cell of gallium indium phosphide and a bottom cell of gallium arsenide in the photvoltaic concentrator cell, were chemically compatible as they have the same lattice constant. His multi-junction cells have been used for space craft and terrestrial uses.
Thursday 16th June 2011
Widely used temperature-accelerated tests can overestimate the lifetime of GaN HEMTs. That’s because they fail to account for device failure mechanisms below the critical voltage that degrade the gate and lead to a surge in leakage current, says imec’s Denis Marcon, Thomas Kauerauf and Stefaan Decoutere.
Monday 13th June 2011
Reducing packaged LED die costs to the new more aggressive roadmap target of $2.20/klm within five years will take some major innovations in manufacturing technology. The good news is that the manufacturing supply chain is making some major progress.
Wednesday 1st June 2011
Are you are looking for a resource covering all aspects of III-Vs on silicon development, from growth approaches and in-situ monitoring tools to a survey of the capabilities of LEDs, lasers, transistors and solar cells? If so, you might consider investing in a copy of III-V Compound Semiconductors: Integration with Silicon based Micoelectronics, writes Richard Stevenson.
Wednesday 1st June 2011
Upping the number of quantum wells from six to nine slashes LED droop
Wednesday 1st June 2011
Engineers produce 20 mW lasers with a side-mode suppression ratio of 60 dB using nano-imprint lithography
Thursday 26th May 2011
In the first follow up to the successful inaugural Compound Semiconductor Industry Awards, Thorsten Matthias, Thomas Uhrmann, Chad Brubaker and Paul Lindner of EV Group discuss their award winning temporary bonding system
Wednesday 25th May 2011
When the order books swell to breaking point, chipmakers can go and build a new fab. But isn’t it better for them to hold on to their cash and find a foundry partner that replicates in-house processing and provides a second source of product manufacture? This is the Anadigics’ way, say the company’s Dan Stofman and Kevin Chang, who tell the story behind implementing this strategy.
Tuesday 24th May 2011
Contacts, transparent conductive oxides and reflective coatings influence the performance of cutting-edge high-brightness LEDs. Each of these requires thin-film deposition, which can be realised by either using a collection of batch tools to process a set of wafers in single process steps, or a by employing a far more integrated cluster tool to handle a single wafer in a whole series of process steps. Allan Jaunzens from Evatec outlines the merits and drawbacks of both approaches.
Wednesday 18th May 2011
At RFMD, we have upgraded our BiFET technology, replacing the JFET device that allowed integration of new DC circuits with a D-mode pHEMT. The result: more efficient products offering greater functionality.
Monday 16th May 2011
The efficiency of most GaN-based LEDs decreases with higher injection current.
Monday 16th May 2011
Researchers from Boston College and MIT have turned to nanotechnology to achieve a 60-90% increase in the thermoelectric figure of merit (ZT) of a p-type quinary compound semiconductor known as a half- Heusler.
Monday 16th May 2011
If you want to grow n-doped GaN layers on silicon with minimal tensile strain, then consider using germanium, rather than silicon as the n-type dopant.
Monday 16th May 2011
Silicon is the entrenched electronic technology in solar cell inverters, hybrid electric vehicles, aircraft landing gear, deep-drilling tools and audiophile amplifiers. But its vice-like grip on these markets looks set to slip as SemiSouth ramps production of its high-voltage SiC diodes and transistors that will underpin improvements in efficiency, reliability and linearity. Richard Stevenson reports.

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