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Technical Insights


Monday 31st January 2011
An ensemble of spatially distributed III-nitride quantum dots can produce the broad, visible emission that is desirable for ambient lighting and the growth of crops, says Soh Chew Beng, Chua Soo Jin and Liu Wei from the Singapore Institute of Materials Research and Engineering.
Thursday 20th January 2011
Inserting an insulating silicon oxide layer between the GaAs layer and electrodes, eliminates spikes in the electric field, which are typically encountered with these devices.
Thursday 20th January 2011
If you want to grow n-doped GaN layers on silicon with minimal tensile strain, then consider using germanium, rather than silicon as the n-type dopant.
Tuesday 18th January 2011
Temperature, electric-field-induced stress, surface potential distribution, and defect generation maps reveal potential device problems and even predict where and when device failure will occur.
Tuesday 18th January 2011
The researchers say that this should be possible by using GaAs NWs of different length as the basis for growing InAs nanowires (NWs).
Tuesday 18th January 2011
The fast moving HB LED sector is starting discussions to consider the kinds of consistent materials characterization, testing protocols, tool interoperability, or other common practices that typically enable a mature high volume industry, reports Paula Doe from SEMI.
Tuesday 18th January 2011
Due to a very small depth of focus, standard photolithography techniques have insufficient fidelity for defining photonic crystal structures on LED epiwafers. But highquality, large-scale patterning is possible by turning to a novel self-imaging photolithography technique, say Harun Solak, Christian Dais and Francis Clube from Eulitha.
Tuesday 18th January 2011
POLISH GaN substrate manufacturer Ammono has unveiled characteristics of its semi-polar (2021) substrates. This cut of GaN is a promising candidate for the production of green lasers. Last summer, engineers at Sumitomo produced a 531 nm edge-emitter by exploiting the relatively high indium incorporation in InGaN quantum wells grown on this plane, plus the built-in electric fields that push emission to longer wavelengths.
Tuesday 18th January 2011
A GERMAN team claims to have broken the record for data transmission from an oxideconfined 980 nm VCSEL operating at 85 °C. Their device, which is capable of 25 Gbit/s operation at that elevated temperature, is an ideal source for very short optical links in high performance computers, according to the researchers from the Technical University of Berlin and VI Systems.
Tuesday 18th January 2011
CURVE fitting with the standard equation for carrier recombination in an LED shows that Auger recombination cannot, by itself, account for droop, the decline in device efficiency at high drive currents. That’s the claim of a partnership between Rensselaer Polytechnic Institute (RPI), Sandia National Laboratories and Samsung LED.
Thursday 13th January 2011
The use of LEDs is already widespread in consumer electronics, appliances, and other products. Single LEDs are seemingly ubiquitous; LED assemblies are widely used in mobile electronics, computer displays, and televisions. We can expect that LEDs will spread through industrial lighting and into the general lighting of our homes. By Ryan Clement and Robin Gardiner, at MATHESON.
Wednesday 12th January 2011
Physical vapor transport can produce high-quality 2-inch AlN crystals with low dislocation densities. Substrates sliced from these crystals provide an ideal platform for the growth of ultraviolet LEDs, lasers and RF devices, says a team from Nitride Crystals.
Wednesday 12th January 2011
RESEARCHERS at the Naval Research Laboratory in Washington DC claim to have produced the first InAlAsSb/InGaSb DHBTs with an InAsSb emitter and sub collector.
Monday 10th January 2011
Scientists from Hong Kong have built a GaN power tunnel FET that simultaneously delivers normally-off operation and low off-state leakage current.
Wednesday 29th December 2010
Researchers have found that GaN Gate-Injection Transistors (GITs) could remarkably reduce the energy consumption in power conversion systems, since they have inherently low on-state resistance and low switching losses.
Thursday 23rd December 2010
Calculations indicate that InGaN solar cells can deliver higher efficiencies if a N-polar form of the material is employed.
Wednesday 22nd December 2010
Antiphase boundaries are suppressed by artificially creating double atomic steps on a rounded thin Ge buffer layer by annealing the Ge surface at a temperature above the Ge surface roughening point.
Tuesday 21st December 2010
A dozen or so companies are developing ultraviolet and white LEDs for market. In two to four years time products will launch and kick-on to net over $400 million by 2015, according to NanoMarkets analyst Lawrence Gasman. Richard Stevenson investigates.
Monday 20th December 2010
The concentrated photovoltaics industry should deliver massive growth over the next few years, according to market analyst Carlos Márquez from CPV Today. But this success requires recent installations to demonstrate that this technology can generate electricity reliably, while offering investors a good return on their money. Richard Stevenson reports.
Thursday 16th December 2010
Scientists at MIT and Sandia National Labs have demonstrated a new tetrahertz laser which does not need supercooling. It can detect explosives and operates at higher temperatures than some thought possible.
Thursday 9th December 2010
Calculations based on perturbation theory reveal that the Auger non-radiative recombination process in bulk InGaN is not nearly strong enough to account for LED droop.
Thursday 2nd December 2010
The diode dramatically reduces power losses and can be employed in the production of power conditioning of solar power systems, motor drive circuits and in inverter and power factor correction (PFC) circuits.
Monday 22nd November 2010
Scientists at SEI have shown that green laser diodes grown on the semi-polar GaN plane have half the threshold current of green LDs grown on the commercially used GaN c-plane.
Friday 12th November 2010
Researchers in Austria and the U.S.A have demonstrated a novel room temperature lateral etching process which can be applied to AlGaAs devices with arbitrary aluminum content.

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