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Technical Insights


Thursday 14th June 2012
Aluminium gallium nitride photodectors have been fabricated by Chinese researchers using a proprietary high temperature MOCVD process and a special surface treatment
Thursday 14th June 2012
During the last 12 months the share prices of all the leading III-V chipmakers have fallen. But why has the value of some companies dropped by just a few percent, while others have plummeted by more than two-thirds? Richard Stevenson investigates.
Tuesday 12th June 2012
Rocketing demands for data transfer are signaling a switch from copper interconnects to those based on optical fiber. But these new links will only receive widespread adoption when they are paired with ultra-high-speed sources, such as our VCSELs that combine record-breaking modulation speeds with high temperature operation, say Werner Hofmann and Dieter Bimberg from TU-Berlin.
Monday 11th June 2012
Silicon foundries could switch production from silicon MOSFETs to those based on III-Vs and germanium by the end of this decade. Making this transition is far from trivial, but progress is being made in gate dielectrics, contact resistance, peak current flow and material quality. Richard Stevenson reports.
Friday 8th June 2012
Transistors built fromGa2O3 have tremendous potential. They have a far higher electric field strength than those made from GaN and SiC, and they can be formed from native substrates produced with simple, low-cost methods, says Masataka Higashiwaki from the National Institute of Information and Communications Technology (NICT), Japan.
Thursday 7th June 2012
Green GaN lasers are very different from their red and infrared III-V cousins: They are strained, plagued by strong internal electric fields and have massive band offsets. But if you can understand these traits and use some of them to your advantage, it is possible to design devices for plugging the green gap, say Dmitry Sizov, Rajaram Bhat and Chung-En Zah from Corning.
Thursday 31st May 2012
Imaging the brain of a mouse with arrays of 470 nm LEDs and silicon pixels.
Wednesday 30th May 2012
Grading quantum barriers cuts LED droop
Monday 28th May 2012
UV LED performance soars with the addition of a little indium incorporation in the active region and optimized metallic contacts.
Thursday 24th May 2012
Thursday 24th May 2012
Researchers have used a simulation of InAs quantum dots to accurately reproduce experimentally measured optical spectra
Monday 21st May 2012
The first GaN HEMTs grown on free-standing diamond, GaN pressure sensors with various designs, robust chemical sensors and power amplifiers delivering hundreds of watts are some of the many highlights of the European project entitled MORGaN. The programme’s leader, Sylvain Delage from III-V Lab, details the many accomplishments.
Thursday 17th May 2012
White LEDs have two major weaknesses: Droop, the decline in device efficiency as the drive current is cranked up; and phosphors,which drag down efficiency and add to production costs. The solution to both these issues, according Zetian Mi from McGill University, is to turn to phosphor-free dot-in-a-wire white LEDs.
Thursday 17th May 2012
Compound Semiconductor Manufacturing Award
Wednesday 16th May 2012
Faster, more responsive photodiodes with greater linearity result from modifying the well-established uni-traveling carrier structure. These higher performance photodiodes that result can improve the performance of analogue optical links, which are used for radio over fibre, distributing high-purity radio frequency (RF) signals and military radar, say Yang Fu, Huapu Pan, Andreas Beling and Joe Campbell from the University of Virginia.
Friday 11th May 2012
If a small start-up is to succeed in the GaAs industry, it must identify niche markets and focus on them. BeRex has done just that, and it is now winning substantial sales in the mobile infrastructure and microwave sectors. Richard Stevenson reports.
Thursday 10th May 2012
Speaking at CS Europe 2012, leading market analysts predicted healthy sales growth for GaAs microelectronics, plus rocketing revenues for LEDs and wide bandgap devices. Richard Stevenson reports.
Friday 20th April 2012
Traditional measurement techniques fail to reveal the harmonic signals in power amplifiers that drag down efficiency. But they can be exposed by Mesuro’s novel measurement technology, which can underpin improvements in all forms of nonlinear device. Richard Stevenson reports.
Friday 20th April 2012
Operating a HEMT at a low bias for hours and hours can lead to failure, due to a steady accumulation of defects that eventually create a breakdown path
Friday 20th April 2012
Combining a GaN pump source with a novel II-VI structure yields a powerful, efficient green laser
Friday 20th April 2012
A silicon dioxide bonding process promises to unlock the door to circuits exploiting the strengths of silicon and GaN
Thursday 19th April 2012
Fierce competition in the backlighting market is squeezing the profits of leading LED chipmakers,which are now trying to boost their margins by targeting general lighting. At Epistar, this had led to the development of highly efficient warm-white sources that combine red and blue chips, explains Epistar’s Shao-You Deng, Special Assistant to the company’s General Manager, in a interview with Richard Stevenson.
Tuesday 3rd April 2012
Replace silicon diodes and transistors with those made from SiC and the operating temperature of power electronics can soar to such an extent that bulky thermal management systems are no longer needed. The upshot: Squeezing grid-scale renewable energy inverters, downhole electronics and aerospace engines and actuators into far smaller spaces, says Ranbir Singh of GeneSiC.
Monday 2nd April 2012
Wireless-over-fibre systems are needed to increase data rates to the speed demanded by next-generation wireless networks. One key component in these systems is the near-ballistic uni-traveling carrier photodiode, which can operate at ultra-high speeds with the addition of a p-type charge layer inside the collector, says Jin-Wei Shi from National Central University, Taiwan.

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