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Technical Insights

Tuesday 4th June 2013
Tiny tunnels enable the growth of single-crystalline GaN on amorphous substrates
Tuesday 28th May 2013
Like many companies around the world, RF Micro Devices and Transphorm are moving from the development of GaN FETs to their production. How far have these firms got? Richard Stevenson investigates.
Friday 24th May 2013
Just when you thought Amonix was scaling down operations, the CPV system manufacturer comes back with a re-vamped manufacturing strategy and a cheaper module. Compound Semiconductor talks to founder, Vahan Garboushian, about the company's future.
Monday 20th May 2013
A misconception is holding back the development and deployment of GaN devices that are built on silicon substrates. This platform is widely blamed for compromising blocking voltages, but it doesn’t: It is possible to make diodes and HEMTs on silicon that have breakdown voltages of well over 2 kV, according to Timothy Boles and Douglas Carlson from M/A-COM Technology Solutions, Tomas Palacios from MIT and Mike Soboroff from the US Department of Energy.
Friday 17th May 2013
Will CrystAL-N's two inch aluminium nitride substrates trigger UV LED market growth, asks Compound Semiconductor.
Wednesday 15th May 2013
There are many options for improving the performance of III-V solar cells, including inserting quantum wells and dots to extend spectral coverage and adding nanoparticles and diffraction gratings to boost light trapping. Insights into all these approaches are outlined by Sudha Mokkapati, Samuel Turner, Haofeng Lu, Lan Fu, Hark Hoe Tan and Chennupati Jagadish from The Australian National University
Friday 10th May 2013
As concentrated photovoltaic businesses soldier on, research into novel III-V devices is rife. Compound Semiconductor looks at what the future holds for the industry.
Thursday 9th May 2013
To fulfil the tremendous potential of graphene, high-quality material must be shipped in significant volumes. One supplier looking to do just that is Graphensic, which has developed graphene-on SiC products for making structures for metrology, high-speed transistors and biosensors. Company founders Rositza Yakimova, Mikael Syväjärvi, and Tihomir Iakimov detail their progress.
Friday 3rd May 2013
Diversification lies at the heart of Kyma Technologies’ vision for its future. It first made a name for itself as a leading supplier of wide bandgap materials, but it is now expanding its offerings and has starting to provide plasma vapour deposition (PVD) equipment and photoconductive switches, explains the company chief executive officer, Keith Evans.
Friday 3rd May 2013
In the race to light up Russia's streets and parks, the Optogan-Philips joint venture prepares to shine the brightest, Compound Semiconductor reports.
Monday 29th April 2013
Photonic integrated circuits enable the construction of compact, highly functional components, but operation tends to be restricted to telecom wavelengths. We are now addressing this shortcoming by developing devices that operate further into the infrared, say imec's Dries Van Thourhout and Gunther Roelkens.
Friday 26th April 2013
Why seasoned chief executive, Giorgio Anania, believes the world is ready for 3D LEDs, reports Compound Semiconductor.
Tuesday 23rd April 2013
It’s great for business to adopt a holistic approach to sapphire manufacturing. When a firm begins with the processing of raw materials and ends with wafer polishing, it enables a trimming of manufacturing costs, the application of proprietary processes to many steps used in sapphire substrate production, and improvements to the reliability of product supply, argues Raja Parvez from Rubicon Technology.
Friday 19th April 2013
As Toshiba sends its SiC diodes out to photovoltaic markets, what can we expect next, asks Compound Semiconductor.
Wednesday 17th April 2013
Lasers and LEDs that are grown on semi-polar planes deliver very impressive performance at green wavelengths, but commercial success of these devices is hampered by a lack of affordable, high-quality substrates with appropriate orientations. To address this, a German team is developing various methods to make semi-polar material, and studying its properties in detail. Richard Stevenson reports.
Monday 15th April 2013
Direct Auger recombination causes droop, but its impact can be diminished inserting graded layers into quantum wells to smooth the confining potentials.
Thursday 11th April 2013
How can LED epiwafers costs fall to a level that can spur mass adoption of solid-state lighting? By turning to growth on 200 mm silicon substrates, loaded into a multi-wafer MOCVD reactor equipped with advanced thermal management and optimised wafer recesses, argues Aixtron’s Boerge Wessling.
Friday 5th April 2013
As long wavelength ultraviolet LEDs penetrate commercial curing markets, shorter wavelength counterparts prepare to take on water sanitation, wireless handset disinfection and more. But will substrate and epitaxy issues stymie progress, asks Compound Semiconductor.
Thursday 28th March 2013
As MOCVD tool makers hang on for the LED upturn, an unexpected entrant from China is hoping to muscle in on the market share. Compound Semiconductor looks at AMEC's master-plan.
Thursday 28th March 2013
Firms developing and producing GaN-on-silicon devices for the power electronics industry come in many different flavours. Some sell on the open market; some just ship to a chosen few; others offer foundry services; and there are also those that form partnerships. Zel Diel, Managing Director of Venture-Q LLC, considers these various approaches and their implications, before looking at how far companies have progressed towards commercialization of their technology.
Wednesday 27th March 2013
Surface activated bonding of GaAs and silicon substrates can yield high-quality heterojunctions, according to electrical characterization and microscopy.
Monday 25th March 2013
Multiple markets beckon for substrate-emitting, miniature LEDs
Friday 22nd March 2013
Liftoff coatings require specific rules of deposition (normal or 90o) incidence angle be maintained to prevent metal deposition onto resist via sidewalls.
Friday 22nd March 2013
Will Cree's $10 LED light bulb end America's century-long incandescent love affair, asks Compound Semiconductor.

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