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Technical Insights

Monday 8th December 2014
Breakthroughs in power electronics, advances in ultraviolet emitters and new arguments associated with the debate on droop featured at the latest international nitrides meeting 
Thursday 4th December 2014
Should developers of nanowire LEDs seek success with devices sporting diminished droop? Or should they try undercutting the cost of incumbent chips?
Monday 27th October 2014
Merging the quantum cascade laser and transistor promises new applications involving mid-infrared wavelengths through to terahertz frequencies
Wednesday 22nd October 2014
GaN substrates formed from ammonothermal growth underpin the fabrication of devices delivering outstanding levels of performance
Monday 20th October 2014
A robust, reliable foundry process will spur a proliferation of GaN applications
Wednesday 15th October 2014
Production costs for GaN-based devices will plummet when epilayers are formed on 200 mm silicon
Monday 13th October 2014
By sucking heat from GaN HEMTs better than other substrates, diamond enables transistors to operate at higher ambient temperatures and have reduced finger spacing
Wednesday 8th October 2014
VCSELs that excel in speed and efficiency can aid data centres and play a role in night vision, ultra-high density magnetic storage, cosmetics and healthcare
Monday 6th October 2014
Inserting rare earth oxides increases material quality, trims wafer bow and boosts transistor performance
Thursday 2nd October 2014
Breakthroughs in laser diode and fibre-coupling technologies are enabling low-cost, high-reliability sources with remarkable sheet metal cutting capabilities
Wednesday 1st October 2014
Record mobilities, production processes on 300 mm silicon and impressive nanometre-scale performance indicate that III-V MOSFETs are getting closer to enter production
Friday 26th September 2014
When it comes to efficient delivery of power to the antenna, UltraCMOS technology is now outperforming GaAs
Tuesday 23rd September 2014
With envelope tracking enhancing the efficiency of CMOS PAs to the levels of their GaAs cousins, is the incumbent technology under threat?
Monday 22nd September 2014
Sales of SiC MOSFETs are rising on the back of falling prices, expanding product portfolios and the entrance of new chipmakers into the market 
Monday 4th August 2014
The debate over the cause of efficiency droop in nitride LEDs is heating up as recent publications ‘unambiguously’ assign this malady to Auger recombination. Here we take a critical look at the proposed efficiency sapping mechanisms, discuss several missing pieces in the droop puzzle and offer an intriguing new LED architecture for efficiency enhancement.
Tuesday 29th July 2014
Parallel printing of miniature multi-junction cells offers a low-cost, scalable approach to the production of CPV modules
Monday 28th July 2014
Concerns over reliability testing and material quality are tempering the success of the GaN HEMT
Wednesday 23rd July 2014
Evaluating efficiency via outdoor testing of a CPV module
Tuesday 22nd July 2014
Novel LED model offers new insights into droop 
Monday 21st July 2014
MBE-grown GaAs can maintain the march of Moore’s law by forming faster, low-power ICs with optical capabilities.
Thursday 17th July 2014
Marrying HVPE and ammonothermal growth techniques will accelerate the production of ultra-high quality GaN
Thursday 10th July 2014
The latest red phosphor from Philips-Lumileds and LMU Munich researchers could usher in next generation white LEDs sooner rather than later. Compound Semiconductor reports.
Tuesday 8th July 2014
New formulations increase the quality and intensity of LED lighting

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