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Technical Insights


Monday 8th June 2015
Wafer-bonding can create powerful terahertz lasers for real-time imaging of hidden weapons, illicit drugs and forms of cancerBY MARTIN BRANDSTETTER, CHRISTOPH DEUTSCH, MICHAEL KRALL AND KARL UNTERRAINER FROM VIENNA UNIVERSITY OF TECHNOLOGY
Monday 1st June 2015
Makers of solid-state lighting should turn to aluminium nanoceramics to cut the cost of thermal management in high-power LEDsBY RALPH WEIR FROM CAMBRIDGE NANOTHERM
Wednesday 13th May 2015
Perfected packages housing advanced emitters are yielding brighter, more efficient sources
Monday 11th May 2015
A novel form of MBE known as metal-modulated epitaxy could improve the performance of LEDs, transistors and solar cells, by delivering a breakthrough in p-type doping.
Thursday 7th May 2015
Vertical electron transport and a well-defined junction make the InP HBT the best building block for powerful, high frequency amplifiers
Tuesday 5th May 2015
What’s the trick to growing high-quality GaAs on silicon? It’s inserting a layer of graphene between them.
Friday 1st May 2015
From integrated circuits to solar, ultraviolet curing and electronic systems in electric vehicles, deployment of compound semiconductor chips is going to rise throughout this decade.
Tuesday 28th April 2015
Will ease of integration spur eventual dominance of the CMOS power amplifier, or will GaAs continue to reign, thanks to superior performance?
Monday 23rd March 2015
Superluminescent diodes marry the virtues of LEDs and laser diodes by offering droop-free emission from a high-quality beam that can deliver speckle-free projection 
Wednesday 11th March 2015
Can terahertz HEMTs result from a switch from GaN to InN channels?BY JÁN KUZMÍK FROM THE SLOVAK ACADEMY OF SCIENCES
Wednesday 11th March 2015
Many paths to optimal colour mixing will accelerate the adoption of solid-state lightingBY SERGEY KARPOV FROM THE STR GROUP (SOFT - IMPACT)
Tuesday 3rd March 2015
After decades of playing second fiddle to sputtering in the silicon industry, electron beam evaporation now dominates in the compound semiconductor industry, thanks to its inherent advantage in the lift-off process  BY IMRAN AMIRANI FROM FERROTEC
Tuesday 3rd March 2015
Laser diodes can be more powerful when they employ facets with equal reflectivity, and brighter when they features an architecture that trims the number of lateral modes RICHARD STEVENSON REPORTS
Sunday 1st February 2015
Wafer bonding forms high-performance devices with insulating and conducting interfaces.BY MARTIN EIBELHUBER, CHRISTOPH FLÖTGEN AND PAUL LINDNER FROM EV GROUP
Sunday 1st February 2015
MOSFETs made from SiC can plummet in price when the cubic form of this material is grown on large silicon substratesBY PETER WARD FROM ANVIL SEMICONDUCTORS
Sunday 1st February 2015
Increased efficiencies, superior power-handling capabilities and higher breakdown voltages give GaN the upper hand over silicon LDMOS in L-band radarBY DOUG CARLSON AND ERIC HOKENSON FROM MACOM
Sunday 1st February 2015
The bipolar junction transistor, a building block of integrated circuits of the 1960s, is given a new of life in SiC circuits operating at 600°CBY CARL-MIKAEL ZETTERLING AND LUIGIA LANNI FROM KTH ROYAL INSTITUTE OF TECHNOLOGY, SWEDEN
Sunday 1st February 2015
Slashing the cost of CPV will not come from just edging up efficiency: It will also result from introducing ultra-high concentrations and moving to streamlined, high-volume production.BY RICHARD STEVENSON
Sunday 1st February 2015
Novel clamping of sapphire looks to unleash brighter, cheaper LEDs BY MARK DINEEN FROM OXFORD INSTRUMENTS
Sunday 1st February 2015
Mixed messages emerge from IEDM, with experimental efforts highlighting the promise of III-V transistors and calculations unveiling some weaknesses
Wednesday 17th December 2014
Equipping the grid with SiC-based solid-state transformers will lead to more efficient delivery of better-regulated power 
Monday 15th December 2014
Single-crystal, high-quality AlN substrates underpin the production of bright, reliable ultraviolet LEDs delivering superior wavelength stability
Monday 15th December 2014
Analytical models accounting for reflections and photon recycling provide accurate predictions of device results. 
Thursday 11th December 2014
High-quality wafers processed on a 150 mm GaAs fabrication line promise lower GaN MMIC production costs 

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