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Technical Insights


Wednesday 11th November 2015
To lower losses in power conversion units, European project HiPoSwitch has established processes and infrastructure for low-cost manufacture of GaN-on-silicon HEMTs.BY JOACHIM WÃœRFL FROM THE FERDINAND-BRAUN-INSTITUT (FBH), BERLIN
Monday 2nd November 2015
Researchers continue to debate the cause of the fall in LED efficiency at higher drive currentsBY SAIKAT DAS, VITALIY AVRUTIN, ÃœMiT ÖZGÃœR AND HADiS MORKOÇ FROM VIRGINIA COMMONWEALTH UNIVERSITY AND ARVYDAS MATULIONIS FROM CENTER OF PHYSICAL SCIENCES AND TECHNOLOGY, VILNIUS
Monday 2nd November 2015
Single-wafer systems combine great levels of uniformity with minimal maintenance and an easy route from development to high-volume production, making them ideal for the production of GaN-on-silicon HEMTsBY SUDHAKAR RAMAN, SOMIT JOSHI AND GEORGE PAPASOULIOTIS FROM VEECO INSTRUMENTS
Monday 2nd November 2015
A revolution in Raman spectroscopy allows routine mapping of SiC wafers in little more than an hour. 
Wednesday 14th October 2015
The dot-com boom and the explosion in handset sales have ramped up the production of GaAs chips, and enabled their reliability to rival those made from silicon BY BILL ROESCH FROM QORVO
Thursday 8th October 2015
Richard Stevenson quizzes NREL principle scientist Sarah Kurtz on the progress of CPV, the false dawns of this technology, and what must happen for this technology to truly take off
Thursday 8th October 2015
Founded on the promise of delivering a superior tool for modelling laser diodes, Crosslight has blossomed into a provider of a range of software for understanding III-V technologies
Monday 5th October 2015
During the last 20 years the LED has progressed from being a niche product to backlighting billions of screens and illuminating countless homes and offices.BY BOB STEELE, INDEPENDENT CONSULTANT IN SOLID-STATE LIGHTING
Monday 5th October 2015
In the early 1990s, the US led the development of an infrastructure for GaAs MMIC manufacturing. The result: A technology that lies at the heart of the mobile wireless revolution.BY ERIC HIGHAM FROM STRATEGY ANALYTICS
Monday 21st September 2015
The compound semiconductor industry will be even more healthy in 2035 than it is today, thanks to emergence of ultrafast wireless, soaring sales of electric cars and ubiquitous LED lighting
Wednesday 16th September 2015
Lasertec, a supporter of semiconductor engineers for decades, continues to refine its SiC inspection and analysis tool that aids identification and minimization of various defects.BY YUJI ASAKAWA FROM LASERTEC
Wednesday 16th September 2015
Glance through the premier issue of Compound Semiconductor and you’ll find articles about improving the efficiency of traffic lights, developing blue VCSELs and the birth of the GaN LED.
Wednesday 29th July 2015
Existing and emerging opportunities for GaN transistors and ways to make them even better lay at the heart of this year’s CS Mantech. By Richard Stevenson
Wednesday 29th July 2015
A concise, multi-author treatise discusses issues relating to the efficiency, linearity and manufacturability of silicon power amplifiersBY RICHARD STEVENSON
Tuesday 21st July 2015
Reflection anisotropy spectroscopy exposes defects and anti-phase domains that can destroy the performance of III-V- on-silicon devices BY OLIVER SUPPLIE, SEBASTIAN BRUECKNER, MATTHIAS M. MAY AND THOMAS HANNAPPEL FROM TU ILMENAU
Monday 20th July 2015
High-efficiency CPV could become a reality for rooftops by uniting microscale solar cells with a planar microtracking concentrator technology BY JARED PRICE AND CHRIS GIEBINK FROM THE PENNSYLVANIA STATE UNIVERSITY AND XING SHENG AND JOHN ROGERS FROM THE UNIVERSITY OF ILLINOIS AT URBANA-CHAMPAIGN
Thursday 16th July 2015
Doping of GaN with europium enables a red LED to join forces with blue and green cousins and form a monolithic, full-colour chip BY YASUFUMI FUJIWARA FROM OSAKA UNIVERSITY AND WOJCIECH JADWISIENCZAK AND FAIZ RAHMAN FROM OHIO UNIVERSITY
Tuesday 14th July 2015
Laser-pumped phosphors create more compact and efficient headlamps that double driver visibilityBY ABDELMALEK HANAFI AND HELMUT ERDL FROM BMW
Friday 10th July 2015
Terrestrial opportunities for III-V cells are not limited to concentrating photovoltaics: These devices can also form flexible, efficient power sources for unmanned aircraft, smartphones, tablets and automobiles. By Robert Parenti from Alta Devices
Friday 26th June 2015
Vertical GaN MOSFETs with a hexagonal layout are now meeting the requirements for automotive applications 
Wednesday 24th June 2015
Are parasitic currents in p-type layers holding back the efficiency of many commercial LEDs?BY GREG TOGTEMA FROM LAKEHEAD UNIVERSITY AND K. SCOTT BUTCHER FROM MEAGLOW
Monday 22nd June 2015
Automated reactors that accommodate more wafers and in-situ cleaning drive down the cost of making wide bandgap devices for power electronicsBY CHRISTOPH GIESEN AND MICHAEL HEUKEN FROM AIXTRON
Thursday 18th June 2015
Lux Research forecasts novel circuit design, and more, will sustain silicon's mammoth market share and stunt compound semiconductor growth. Rebecca Pool reports.
Monday 15th June 2015
Stressor layers that crank up the speed of electrons are enabling a novel form of GaN-on-silicon transistor to offer a promising route to maintaining the march of Moore’s law BY SUBRAMANIAM ARULKUMARAN AND GEOK ING NG FROM NANYANG TECHNOLOGICAL UNIVERSITY, SINGAPORE

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