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Technical Insights

Wednesday 2nd April 2014
With two hefty space contracts already in hand, this year is shaping up nicely for Emcore. Compound Semiconductor probes the III-V systems manufacturer on NASA, its elusive next generation inverted metamorphic solar cell and more.
Monday 24th March 2014
To form the best films, users of electron beam evaporators must understand how uniformity is influenced by the number of axes for substrate rotation, the insertion of shadow masks and the distance between source and substrate.
Thursday 20th March 2014
Following strong MOCVD reactor sales, analysts across the board predict LED manufacturers in China will rapidly ramp up production. Compound Semiconductor investigates.
Wednesday 12th March 2014
From radar to jammers, the defence industry has spent more than a decade developing GaN for US military applications. Compound Semiconductor asks Raytheon, where next for the technology?
Monday 10th March 2014
Conventional green LEDs are plagued by strong internal electric fields, which impair recombination and make it difficult to address droop. The solution is switch to growth on the cubic phase of GaN, which is free from internal fields and has a smaller bandgap, making it easier to reach longer wavelengths.
Wednesday 5th March 2014
Switching from conventional patterning of sapphire to a nano-scale variant trims epitaxial growth times and materials costs while boosting extraction efficiency.
Wednesday 5th March 2014
Could imec's CMOS car radar chip prompt industry to move to pure silicon, asks Compound Semiconductor.
Monday 3rd March 2014
Building a GaN VCSEL is far harder than making one from GaAs, but progress is being made through the introduction of different types of mirrors, alternative current injection schemes and new crystal orientations.
Wednesday 26th February 2014
RF chip rivals, RFMD and TriQuint, have combined to create a multi-billion dollar industry giant. What does the merger mean for the rest of the industry? Compound Semiconductor investigates.
Monday 24th February 2014
Monolithic integration of LEDs and transistors is helping to usher in a new era for solid-state luminaires, where the emitter and its control electronics are united on single chip.
Wednesday 19th February 2014
Peregrine Semiconductor's CMOS power amplifier promises GaAs-level performance in 4G phones. Will handset manufacturers now shift to silicon, asks Compound Semiconductor.
Wednesday 12th February 2014
Kyma has teamed up with Ammono and Avogy to drive novel bulk GaN growth forward. Compound Semiconductor finds out more.
Tuesday 11th February 2014
To maintain the improvements in efficiency that traditionally result from shrinking transistor dimensions, foundries will soon have to replace silicon channels with those based on higher mobility semiconductors. This move, a monumental upheaval for the silicon industry, could be easiest to implement by turning to engineered wafers with separate layers for the p-type and n-type transistors, argues Lukas Czornomaz from the Advanced Functional Materials Group at IBM Zurich.
Thursday 6th February 2014
As Professor Jay Baliga, North Carolina State University, steps up to lead the $140 million 'Next Generation Power Electronics National Manufacturing Innovation Institute', Compound Semiconductor asks about his past, plans and relentless pursuit of the power semiconductor.
Wednesday 29th January 2014
As investors applaud Cree's latest financial results, LED lighting market conditions look set to promote more of the same, reports Compound Semiconductor.
Tuesday 21st January 2014
Rubicon Technology to ease LED manufacture by ramping patterned sapphire substrate production and more. Compound Semiconductor reports.
Friday 10th January 2014
IHS predicts silicon-based LEDs will nearly rival sapphire-based devices on market share come 2020. Compound Semiconductor finds out more.
Thursday 9th January 2014
Optical designers are keen to combine the high-intensity, directional output of a laser with the low cost and broad spectral output of an LED. These wishes can now be fulfilled, due to the development of a novel LED featuring a parabolic mirror, claims Bill Henry from InfiniLED.
Thursday 2nd January 2014
The debate on droop has been enriched by compelling evidence that Auger is to blame. Strong support for this includes our novel experimental data that shows that carriers produced in a green quantum well interact via Auger processes to generate higher energy carriers, which populate and recombine in an ultraviolet well, explain Michael Binder, Bastian Galler, Roland Zeisel and Anna Nirschl from Osram Opto Semiconductors.
Friday 20th December 2013
At the heart of the debate over the origin of droop is the question: Auger or not Auger? Circumstantial evidence for Auger has been mounting, and now this is joined by a ‘smoking gun’, the observation of hot Auger electrons in electro-emission. Detailing their novel experiment and its interpretation are a UCSB-Ecole Polytechnique partnership involving Claude Weisbuch, James Speck, Justin Iveland, Marco Piccardo, Lucio Martinelli and Jacques Peretti.
Thursday 19th December 2013
Photoluminescence exposes improvements within the quantum well
Wednesday 18th December 2013
It is expensive to manufacture a GaN laser, and its peak efficiency is not that impressive. So why is this device, rather than the LED, being touted as the future of solid-state lighting? RICHARD STEVENSON investigates.
Tuesday 17th December 2013
To prevent the formation of efficiency sapping defects, conventional multi-junction cells are built with lattice-matched materials. But this restriction can be lifted with wafer-bonding, which enables the fabrication of a four-junction cell with record-breaking efficiency, say Rainer Krause and Bruno Ghyselen from Soitec and Frank Dimroth from the Fraunhofer Institute for Solar Energy Systems.
Friday 13th December 2013
GaN crystal newcomer, Fairfield Crystal Technology, is ready to take substrates to greater lengths, reports Compound Semiconductor.

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