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Technical Insights


Thursday 29th August 2013
Lasers from the lab hit up to 250 mW in the green and 4W in the blue
Tuesday 27th August 2013
Engineers at Samsung and Osram claim that LEDs grown on silicon can deliver a performance that is very close to that of today's emitters grown on sapphire
Monday 19th August 2013
Cutting cell costs will ensure that concentrating photovoltaic systems become more competitive. One way to do this is to turn to silicon substrates incorporating germanium-based layers, which bridge lattice constants and allow the formation of a 1 eV junction for boosting efficiency, say Andrew Clark, David Williams and Radek Roucka from Translucent.
Thursday 15th August 2013
Telecom and datacom networks are under ever-increasing strain from an explosion in data transfer. What's the long-term solution? It's a universal photonics technology that marries InP performance with large silicon wafers, argue Daniel Sparacin and Greg Fish from Aurrion.
Tuesday 13th August 2013
The US Department of Defense views GaN MMICs as too expensive and insufficiently reliable for its needs. To address these shortcomings, it is spearheading a project to drive down cycle times, increase yield and improve reliability. Richard Stevenson reports.
Thursday 8th August 2013
Come 2020, US analyst business, Lux Research, predicts sapphire-based LEDs will still dominate a multi-billion dollar LED lighting industry. Compound Semiconductor finds out why.
Wednesday 7th August 2013
Rumours are circulating that reserves of indium could soon run out, threatening the production of displays, LEDs, and lasers. But if you take a hard look at the evidence, you’ll find that the naysayers are ill-informed and there is plenty indium to go round for many decades, argues Malcolm Harrower from Indium Corporation.
Monday 29th July 2013
Engineers can build motor drives and power supplies that deliver very high levels of efficiency by combining frugal, fast SiC Super Junction Transistors with optimised gate drivers, argues Ranbir Singh from GeneSiC Semiconductor.
Friday 26th July 2013
As Plessey Semiconductor scales up commercial GaN on silicon LED production, where next for the UK technology pioneer, asks Compound Semiconductor.
Friday 26th July 2013
It is difficult to gauge the state of the concentrating photovoltaic (CPV) industry: Amongst system manufacturers, GreenVolts has folded and Amonix scaled back, but Soitec has announced big, bold plans. Although this indicates that life can be tough in the CPV industry, the sector should grow at a healthy rate according to research manager Sam Wilkinson from IHS, who has been talking to Richard Stevenson about the current state and prospects for this technology.
Friday 12th July 2013
Infinera is storming long-haul fibre optic markets with its InP-based WDM platform. Compound Semiconductor finds out how.
Wednesday 10th July 2013
Covering a graphene contact with a thin layer of nickel allows the performance of an ultraviolet LED built with this upper electrode to get close to that of a conventional device
Tuesday 9th July 2013
Modified active region trims electric fields, increases electron-hole overlap and boosts brightness
Monday 8th July 2013
Conventional imaging techniques, such as various forms of electron microscopy, are incapable of delivering three-dimensional atomic resolution that can offer new insights into the characteristics of GaN-based heterostructures. But this type of measurement is possible with atom probe tomography, say Baishakhi Mazumder, Man Hoi Wong, Jack Zhang, Stephen Kaun, Jing Lu, Umesh Mishra and James Speck from the University of California, Santa Barbara.
Friday 5th July 2013
Investors in deposition equipment want tools that have really high levels of up time, deliver incredibly uniform films and offer an upgrade path that will prevent them from becoming obsolete within a few years. To meet these requirements, it is essential that the equipment vendor and chipmaker work together to improve the deposition system and its process, argue Robert Mohondro from Plasma-Therm and Evan Law and Jim Meyer from RF Micro Devices.
Friday 5th July 2013
As the concentrated photovoltaic industry looks east for market success, silicon-based businesses with more established supply chains could have a head-start, reports Compound Semiconductor.
Thursday 4th July 2013
Electron emission spectroscopy offers new insights into the cause of droopJ. Iveland et. al. Phys. Rev. Lett. 110 177406 (2013)
Wednesday 3rd July 2013
It is essential that tomorrow’s optical networks are built with far more efficient components to prevent the continual ramp in internet traffic from significantly increasing global energy consumption. One promising device that will help in this endeavour is a 1310 nm VCSEL formed by fusing together active regions grown on InP wafers and mirrors formed on GaAs substrates, says Alexei Sirbu from Ecole Polytechnique Fédérale de Lausanne (EPFL) and Eli Kapon from EPFL and BeamExpress.
Monday 1st July 2013
In an industry first, the Office of the Secretary of Defense has rated Raytheon's GaN process as ready for defence production. Compound Semiconductor finds out more.
Monday 24th June 2013
Packaging has its downsides: It increases the footprint and the price of a power MOSFET, while degrading its performance through unwanted increases in resistance and inductance. The best solution is to ditch the package, a step that allows GaN HEMTs to be cost-competitive with silicon incumbents, argues Alex Lidow from Efficient Power Conversion Corporation.
Friday 21st June 2013
Talk of silicon completely displacing GaAs in the RF front-end of cellular phones is premature and dead wrong, argues TriQuint’s Phil Warder. In his view, the future will instead involve smart RF suppliers collaborating closely with OEMs and chipset partners to offer complete RF solutions that exploit the best technologies for each application.
Friday 21st June 2013
Will a new buffer material for gallium nitride tempt LED manufacturers away from sapphire and onto silicon? Compound Semiconductor investigates.
Friday 14th June 2013
As Nujira unveils its highest performing envelope tracking chip for mobile handsets yet, vice president Jeremy Hendy asserts the technology is ready for GaAs and CMOS power amplifiers. Compound Semiconductor reports.
Tuesday 11th June 2013
With continued growth projected for SiC markets, up and coming Japan-based manufacturers prepare to steal the show, reports Compound Semiconductor.

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