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Technical Insights

Monday 17th December 2012
Blue VCSELs could produce continuous-wave emission following improvements to the indium tin oxide current-spreading layer
Friday 14th December 2012
GaAs photovoltaic developer, Semprius, looks set to shine in a solar market where so many are fading, reports Compound Semiconductor.
Monday 10th December 2012
Forming high-quality GaN via growth through holes and coalescence, using sputtering to form high-quality nitride films on metal foil and increasing the versatility of this class of material with the addition of scandium all featured at the recent IWN meeting. Stephan Knoll from the University of Cambridge reports.
Friday 7th December 2012
Which SiC transistor will industry choose? Compound Semiconductor talks to Jeff Casady, ex-chief technology officer of SemiSouth and now at Cree, to find out more.
Wednesday 5th December 2012
Adding an electron-emitting region based on the pairing of AlInGaN and InGaN creates brighter, more robust LEDs that are less prone to droop
Monday 3rd December 2012
Metrophotonics' folding in late 2005 was a blessing for one its former employees, Valery Tolstikhin. It encouraged him to try and fulfil his dream of founding a firm with a radically different business model: Using pure-play RF foundries to make optical devices from photonic integrated circuits. Richard Stevenson quizzes him on the details of this vision and the successes to date.
Friday 30th November 2012
Following the demise of SemiSouth, what does the future hold for other SiC power transistor manufacturers, asks Compound Semiconductor.
Friday 23rd November 2012
A heady mix of Chinese subsidies, disappointing LED lighting sales and near-saturation in back-lighting markets has tipped makers of MOCVD reactors off-kilter. Where next for the equipment manufacturers, asks Compound Semiconductor.
Friday 16th November 2012
Falling bulk gallium nitride costs could soon see the high bandgap substrates displacing cheap silicon wafers. Compound Semiconductor investigates.
Friday 9th November 2012
Will the Australia-based firm's low temperature deposition technology take the strain away from LED manufacturing, asks Compound Semiconductor.
Wednesday 7th November 2012
All systems go for high-brightness pico-projectors as Osram Opto Semiconductors launches green laser diodes, reports Compound Semiconductor.
Monday 5th November 2012
Makers of smartphones and tablets place great importance on the efficiency of amplifiers because this governs battery life. WIN Semiconductors’ latest H2W process has been developed to address that need: It unites on a single die pHEMT featuring a very low insertion loss and a highly linear HBT, says the company’s Andy Tsai.
Friday 2nd November 2012
Dislocation-free crystals can be made by forming GaN points seeds by the sodium-flux method and joining them together via coalescence.
Monday 29th October 2012
How can we accelerate VCSELs to the speeds needed in chip-to-chip optical interconnects? Add a little strain to the quantum wells, tune the photon lifetime and trim cavity size and oxide capacitance, suggest Chuan Xie, Neinyi Li, Phillip Brow and Kenneth Jackson from Sumitomo Electric Device Innovations.
Friday 26th October 2012
Will a new raft of GaN-on-Si materials systems speed the LED industry's switch to silicon, asks Compound Semiconductor.
Monday 22nd October 2012
Although silicon power transistors are inferior to their GaN rivals in many regards, they win hands-down in the metric that matters most: Cost. However, affordable GaN HEMTs are within reach, when production moves to 200 mm GaN-on-silicon epiwafers processed on standard CMOS lines, argues imec’s Brice De Jaeger, Marleen Van Hove and Stefaan Decoutere.
Friday 19th October 2012
Yet again AkzoNobel is increasing capacity at its Texas-based speciality chemicals production site. Compound Semiconductor finds out exactly what is driving growth.
Monday 15th October 2012
The miniscule scratches and pits found on the surface of SiC substrates spawn yield-killing defects in the epiwafers. It is not possible to pick-up these minor imperfections and track their consequences with conventional light-scattering inspection tools, but this can be done with our detection systems employing confocal optics and differential interferometry, argues Yuji Asakawa from Lasertec Corporation.
Friday 12th October 2012
Reductions in external quantum efficiency at high current densities diminish when p-doped InGaN is inserted after the electron-blocking layer.
Monday 8th October 2012
The performance of LED light bulbs is impaired when delamination occurs within or between the parts that make up a packaged device. These deficiencies cannot be detected by widely used characterisation techniques such as X-ray and infrared microscopy, but they are exposed with acoustic imaging at very high frequencies, according to Tom Adams, a consultant to Sonoscan.
Thursday 4th October 2012
Returning home in the early 1980s without a job to go to, Ian Neale had a big decision to make about his future. Hindsight shows that he got it right when he decided to launch Hiden Analytical, a highly successful metrology firm that is now celebrating its thirtieth anniversary. Richard Stevenson reports.
Friday 28th September 2012
Singapore and MIT partners have joined forces with Global Foundries to drive III-V CMOS integration forward. Compound Semiconductor talks to Professor Eugene Fitzgerald from MIT to find out more.
Monday 24th September 2012
Separating the phosphor from the blue-emitting chip is a great way to improve the performance of LED light bulbs, according to Mitch Jansen from Intematix. With this architecture bulbs are brighter, their emission more uniform, and they last far longer, thanks to superior thermal management.
Friday 21st September 2012
Are China-based SiC epi-wafer makers ready to take on US and Japan industry heavyweights, asks Compound Semiconductor.

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