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Technical Insights


Tuesday 18th September 2012
Theorists point the finger at carrier leakage, compositional fluctuations and threading dislocations
Monday 17th September 2012
SiC chipmakers from all over the world have been recently releasing SiC products, including high-current diodes and high-voltage MOSFETs and JFETs. Many of these devices, and some of the modules that were built with them, were unveiled at the fourth International SiC Power Electronics Applications Workshop. Enrique Lamoureux reports from this event.
Thursday 13th September 2012
Researchers at a small, Canadian start-up have unveiled simple test structures that emit incredibly bright green light. Have they filled the green gap, asks Compound Semiconductor.
Monday 10th September 2012
Today’s conventional triple-junction cells seem to offer little room for improvement, with average production efficiencies hovering just below 30 percent. This can be increased by ten percentage points with a switch to six junction cells incorporating two dilute nitride layers, say Simone Missirian, Jeff Allen, Vijit Sabnis and Homan Yuen from Solar Junction.
Monday 10th September 2012
A novel crystal growth process could ease GaN substrate production bringing brighter, more efficient LEDs. Compound Semiconductor talks to the researchers behind the hope.
Friday 7th September 2012
Better material quality and chip encapsulation drive up the power and efficiency of deep UV LEDs
Thursday 6th September 2012
Vast swings in MOCVD reactor shipments, stagnation in LED sales in the build up to the solid-state lighting revolution and technologies to slash the cost of chips for LED light bulbs featured at euroLED 2012. Richard Stevenson reports.
Wednesday 5th September 2012
Optimisation of cavity lengths and facet reflectivity yields powerful, efficient semi-polar lasers
Tuesday 4th September 2012
GaN devices have the potential to capture a billion dollar power market for electrified vehicles. But if they are to be successful, they need to sell for little more than silicon products, have higher threshold voltages than they do today, show no signs of current collapse and deliver very high currents, argue Ming Su and Chingchi Chen from Ford Motor Company.
Monday 20th August 2012
Experimental measurements of LED droop are replicated with a model that includes carrier leakage
Wednesday 15th August 2012
Researchers have developed a novel, vertical transistor that outperforms typical MOSFETs. Compound Semiconductor talks to the Japanese team behind the device that promises to deliver smaller, faster electronics.
Monday 13th August 2012
Strain-balanced QCLs deliver continuous-wave output powers in excess of 500 mW at wavelengths as short as 3.4 µm
Friday 10th August 2012
Blue laser diode inventor, Shuji Nakamura, recently unveiled a non-polar violet VCSEL, claiming 'one of the biggest breakthroughs in laser diode technology'. Compound Semiconductor talks to Nakmura and industry colleagues, to find out more.
Monday 6th August 2012
A novel material system produces powerful, continuous-wave laser emission at 536 nm, an ideal wavelength for the green source in pico-projectors
Monday 30th July 2012
GaN-on-silicon products will become far more competitive when processing is carried out at fully depreciated 200 mm silicon fabs. This requires the use of very flat wafers, which can be formed through the introduction of rare oxide epi-layers that can also enhance the performance of LEDs, transistors and solar cells, say Michael Lebby, Andrew Clark and Guoying Ding from Translucent.
Friday 27th July 2012
Switching from silicon electronics to wide bandgap alternatives promises to deliver improvements in the performance of power supplies, wind turbines, solar systems, hybrid electric vehicles, trams, trains and industrial machinery. Richard Eden from IMS Research, which was recently acquired by IHS, takes a detailed looked at all of these opportunities for wide bandgap devices and identifies the barrier to their mass adoption.
Thursday 19th July 2012
Today’s designers of cutting-edge phones face the same challenge that their predecessors wrestled with: extending the time between battery charging. To succeed now, these designers must build efficient front-end systems offering the high levels of linearity demanded by digital networks operating with complex coding schemes. There are many options for fulfilling these requirements, and they all have their pros and cons, argues Chris Novak, General Manager of 3G/4G Solutions at RFMD.
Friday 13th July 2012
Traditional triple-junction photovoltaics are marred by brittleness, inflexibility and an efficiency that is limited by the germanium cell. To address all of these issues MicroLink has developed a whole-wafer, high-volume epitaxial lift-off technique for producing ultra-thin cells on GaAs. Richard Stevenson reports.
Wednesday 11th July 2012
Swings in market share for the leading GaAs chipmakers, a rise in outsourcing, the introduction of new BiHEMT and HBT processes and bleak prospects for pHEMTs featured at this year’s CS Mantech. Richard Stevenson reports.
Thursday 28th June 2012
Gain a comprehensive overview of the entire compound semiconductor industry at CS International (Inc. CS Europe)
Wednesday 27th June 2012
Low cost carbon nanotube deposition on 300 mm substrates opens up lucrative opportunities in medical, electronics and power industries
Friday 22nd June 2012
Serpentine mask paves the way to ultra-high-quality GaN epilayers
Wednesday 20th June 2012
Unlike etching or laser-lift off, mechanical approaches for separating GaN epitaxial structures from their substrates can be quick, simple and scalable to large areas.
Tuesday 19th June 2012
As LEDs plunge to cryogenic temperatures, droop kicks in at lower drive currents due to diminished utilization of the active region.

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