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Technical Insights

Thursday 21st March 2013
Growth of non-polar GaN on m-plane sapphire is realized without buffer layers and nitridation processes
Monday 18th March 2013
Impact ionization, carrier trapping and leakage paths prevent the channels in today’s HEMTs from providing great transport links between their sources and drains. But improvements should follow, now that these maladies can be exposed with optical and electrical techniques, argue Nicole Killat and Martin Kuball from the University of Bristol.
Friday 15th March 2013
Wide quantum wells that are free from internal electric fields combat droop and enable high efficiencies at high drive currents
Friday 15th March 2013
Qualcomm's new radio chipset may take us closer to a global 4G phone, but does it really signal an end to GaAs power amplifiers in handsets, asks Compound Semiconductor.
Thursday 14th March 2013
Even veterans of reliability measurements struggle to provide customers with predictions of the future reliability of a lot that exhibits early fallout in the factory. That’s because, until recently, it’s been very difficult to gather the data needed to respond with a specific and satisfying answer, says Bill Roesch from TriQuint Semiconductor.
Friday 8th March 2013
Will hybrid silicon be the platform of choice for complex photonic integrated circuits? Compound Semiconductor talks to Martijn Heck from the University of California, Santa Barbara, to find out more.
Friday 1st March 2013
As photovoltaic inverter manufacturers adopt SiC MOSFETs, when will other industries move towards wide bandgap devices, asks Compound Semiconductor
Thursday 28th February 2013
Can the high brightness LED developer unlock the potential of nitride-based LEDs?
Tuesday 26th February 2013
Infrared edge emitters and VCSELs are targeting a growing number of lucrative markets: Gaming, ultra-high density data storage, finger navigation and optical cables for USB and HDMI interconnects. Oclaro’s Robert Blum and Karlheinz Gulden discuss them all in detail.
Thursday 21st February 2013
Introductions of new wireless communication standards are forcing makers of RF Front End components to build products with higher linearity. Silicon-on-sapphire devices excel in this area and, thanks to our UltraCMOS process and accelerated roadmap, the performancegap is expected to continue to grow, versus known competitive technologies such as GaAs, says Rodd Novak from Peregrine Semiconductor Corporation.
Wednesday 13th February 2013
As the RF components market remains robust, RF Micro Devices, Skyworks, and TriQuint are vying for market share. Compound Semiconductor talks to Dale Pfau from global finance firm, Cantor Fitzgerald, about the winners and the losers.
Monday 11th February 2013
The most promising building blocks for the 11 nm node are the pairing of III-V and germanium transistors. Device development is still in its infancy, but research presented at IEDM 2012 indicates that significant progress is being made. Richard Stevenson reports.
Friday 8th February 2013
Business is buoyant for exotic solar cells in space, but back on Earth the industry limps on. Compound Semiconductor talks to Emcore to find out more.
Thursday 7th February 2013
High-quality growth of LEDs on silicon is notoriously difficult, with stresses and strains causing wafers to bow. But these problems are not insurmountable: Plessey Semiconductors is now churning out GaN-on-silicon LED chips from flat epiwafers using a recipe developed at the University of Cambridge. Richard Stevenson reports.
Friday 1st February 2013
Do Cree's rising sales finally signal sustained growth for the LED industry, asks Compound Semiconductor.
Friday 25th January 2013
Optoelectronics developer, Zephyr Photonics, has set its sights on datacoms and high performance computing markets as it launches a fab and foundry business, reports Compound Semiconductor.
Friday 18th January 2013
Silicon photonics and high-density data storage could benefit from a printing process that enables GaAs lasers on new platforms
Friday 18th January 2013
Despite a major re-shuffle in the epiwafer market, analysts predict a stable year for the compound semiconductor industry. Compound Semiconductor talks to Strategic Analytics directors, Eric Higham and Asif Anwar, to find out more.
Friday 11th January 2013
As sapphire substrate makers brace for a year of consolidation, 2013 could deliver the killer application, reports Compound Semiconductor.
Thursday 10th January 2013
Simulations suggest that increasing the number of wells is a great way to combat the mysterious malady known as droop. The optimum number of wells depends on the current density, and it could be a dozen or more, says Simon Li and Changsheng Xia from Crosslight software.
Wednesday 2nd January 2013
White LEDs are efficient, robust, long lasting and dimmable, but they are often let down by a colour quality that is inferior to incandescents. How can this weakness be addressed? By introducing a range of phosphors that deliver broadband emission and ultimately enhance colour fidelity, argues Faiz Rahman from Electrospell.
Friday 21st December 2012
To bring down the cost of solid-state lighting, chipmakers must move to more efficient, automated, high-yield manufacturing on larger substrates. Foundations to support such a move are moving quickly into place: Wafer geometries and marking conventions for 150 mm sapphire are largely set, and work on standards for equipment hardware and software interfaces are well underway, writes Paula Doe from SEMI.
Thursday 20th December 2012
Samsung's Galaxy smartphones are amongst the first mass-produced 3G handsets to feature high-performance CMOS power amplifiers. Will silicon displace GaAs in this sector, asks Compound Semiconductor.
Tuesday 18th December 2012
By far the best way to slash the cost of LEDs so that this form of lighting can take over is to grow the device structures on 200 mm silicon. On this platform, the big challenge is to address the thermal and lattice mismatches that can introduce distortions and imperfections in the GaN-on-silicon epiwafers. The good news is that it is possible to form high-quality, device-grade epilayers that are free from a low-temperature AlN layer and SiN interlayers with in-situ monitoring and growth optimisation, says Sudhiranjan Tripathy from IMRE, Singapore.

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