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Technical Insights

Wednesday 11th December 2013
If reductions in the dimensions of the transistor are going to go hand-in-hand with increases in its performance and a trimming of its power consumption, silicon channels will have to be replaced with higher mobility materials, such as III-Vs. But will this happen, and if so, when? What has to be done to usher in these new materials? And if III-Vs are to make an impact in microprocessors, will they be there to stay? Richard Stevenson puts these questions, plus several more, to analyst Dean Freeman from Gartner Research.
Friday 29th November 2013
ABI Research analyst, Lance Wilson, predicts GaN will drive pulsed RF power device market growth. Compound Semiconductor finds out more.
Tuesday 26th November 2013
To propel widespread uptake of solid-state lighting, LEDs must be cheaper and more efficient. One way to do that is to switch the material used to make these devices from nitrides to cuprous halides, which have incredibly high exciton binding energies and can be grown on silicon substrates, argue Doyeol Ahn from the University of Seoul, Korea, and Seoung-Hwan Park from Catholic University of Daegu, Korea.
Friday 22nd November 2013
Development may be in full swing, but the market is still waiting for much cheaper bulk GaN, reports Compound Semiconductor.
Monday 18th November 2013
Spec sheets can indicate identical compositions of a layer in a particular structure produced by different suppliers. But in practice there will be variations associated with in-house measurements, calibration samples, and data interpretation. Far greater consistency is possible, however, with an expanding portfolio of true reference samples that are already available, argues Kris Bertness from NIST.
Friday 15th November 2013
It is very tricky to come up with a watertight explanation for the cause of droop. However, it is certainly possible to combat this mysterious malady, which causes LED efficiency to decrease at high current densities, by: turning to better electron-blocking layers made from InAlN; and improving the injection of holes into the wells, plus their distribution throughout the active region, argues to Jae-Hyun Ryou from the University of Houston, Russell Dupuis and P. Douglas Yoder from Georgia Institute of Technology and Fernando Ponce from Arizona State University.
Tuesday 12th November 2013
A gold-free metal stack enables HEMT processing that is compatible with silicon fabs
Friday 8th November 2013
Germany-based researchers and industry players join forces to commercialise GaN-on-GaN research. Compound Semiconductor finds out more.
Wednesday 6th November 2013
It is far more challenging to make a bright, cheap ultra-violet LED than one emitting in the blue. But success is promised with a transparent contact layer, reflective electrodes, photonic structures and growth on silicon, says Hideki Hirayama from RIKEN.
Thursday 31st October 2013
As the French government ploughs millions of Euros into concentrated photovoltaic power projects, relative newcomer, Heliotrop, is reaping the rewards, reports Compound Semiconductor.
Monday 28th October 2013
The solid-state lighting revolution will be spurred by plummeting LED costs and improvements to the quality of emitted light. Success on these fronts could be aided by refinements to existing technologies; the introduction of GaN-on-silicon LEDs; a move to colour mixing of red, green and blue LEDs; and a switch from LEDs to lasers at the primary lighting source. All options were discussed at the International Conference on Nitride Semiconductors. Richard Stevenson reports
Monday 21st October 2013
Green LEDs don't deliver the same level of performance as their red and blue cousins. However, by decreasing the current density with a larger chip and optimising growth conditions to reduce dark spots it is possible to close that gap with LEDs that hit 190 lumens per watt at a 100 mA drive current, says Osram�s Andreas L�ffler and Michael Binder.
Friday 18th October 2013
After nearly a decade of development, Glo's nanowire LEDs are slated to reach market early next year. Compound Semiconductor talks to Glo chief technology officer, Nathan Gardner, to find out more.
Thursday 17th October 2013
Grown in an MOCVD reactor, nitride films tend to yield fewer defects than when they are formed in MBE chambers. But this gap in material quality can disappear with high-temperature ammonia MBE, which produces epitaxial structures with outstanding electrical characteristics, argues Alexey Alexeev and Stanislav Petrov from SemiTEq.
Thursday 10th October 2013
Following its Oclaro acquisition, II-VI now intends to simplify operations, re-think manufacturing and pursue new products. Compound Semiconductor reports.
Monday 7th October 2013
Today's telecom lasers are plagued with Auger-related losses, which drive down efficiency and make device cooling mandatory. The solution: Switch to an active region with alloys featuring a bismuth content of more than 10 percent, claim members of the European team BIANCHO.
Friday 4th October 2013
Lux Research recently reported which up and coming solar technologies will succeed. Compound Semiconductor talks to analyst Fatima Toor to find out more.
Thursday 3rd October 2013
A novel, water-based stripper offers a fast, environmentally friendly approach to high quality removal of photoresist and the carrying out of metal lift-off, claims Dirk Schumann from Bubbles & Beyond.
Monday 30th September 2013
In-situ monitoring provides a great deal of valuable information for developers and producers of multi-junction solar cells. It can determine interface quality; the thickness, doping level and composition of every layer; and wafer bow, says Oliver Schulz from LayTec.
Friday 27th September 2013
Belgium and Japan-based researchers unveil an improved process to integrate germanium-tin layers and MOSFETs on silicon substrates. Compound Semiconductor reports
Thursday 26th September 2013
The gases and chemicals that are consumed during the manufacturing of LEDs make a considerable contribution to device costs. But savings are possible by switching to a new MOCVD design with a flared chamber profile. This not only trims gas consumption by up to 40 percent but also shortens the growth interruption between layers, leading to improved multiple quantum well quality, say Frank Campanale, Mike Begarney and Tom Ryan from Valence Process Equipment.
Friday 20th September 2013
Once intent on lighting up the LED industry with its novel process to fabricate nano-rod LEDs, Seren Photonics is now focusing on large semi-polar GaN templates for a brighter light. Compound Semiconductor reports.
Monday 16th September 2013
Conventional sensors for assessing the air quality in buildings are wired into the mains, making them expensive to install and reposition. But portability and battery powering is possible with Gas Sensing Solutions� modules that feature mid-infrared LEDs and photodetectors. Richard Stevenson reports.
Tuesday 10th September 2013
Inferior light quality holds back the sales of most LEDbased replacements for halogen lamps in casinos, hotels, high-end retailers and cruise ships. But that’s not the case for Soraa’s lighting products, which produce full-spectrum emission with a violet LED pumping red, green and blue phosphors. Richard Stevenson reports.

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