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Technical Insights


Wednesday 27th April 2016
"Run-to-Run control can significantly improve process performance, but often at considerable time and cost. Taking a higher level view that applies novel methodologies can increase performance and savings with minimal metrology burdens." Says Joerg Reichelt, Yulei Sun – Rudolph Technologies, Inc. Tilo Bormann, Andreas Gondorf – Vishay Siliconix Itzehoe GmbH.
Friday 22nd April 2016
Designing power conversion systems with fewer, higher-voltage MOSFETs cuts component count, increases reliability and has little impact on the total area of the chips
Friday 22nd April 2016
Drain engineering increases the operating voltage of GaN HEMTs, enabling them to combine unprecedented power, gain and efficiency with great reliability
Friday 22nd April 2016
Combining molybdenum disulphide channels with graphene electrodes creates high-performance transistors that consume very little power.
Tuesday 12th April 2016
Removing thermal boundaries and adding thermal pathways help devices to keep their cool
Monday 4th April 2016
The Chinese LED industry is changing. A multitude of rivals is giving way to a smaller number of larger and ever-expanding LED chipmakers that are targeting growth of domestic and overseas sales, says IHS analyst Alice Tao during a wide-ranging interview with Richard Stevenson.
Monday 4th April 2016
The attributes of white LEDs are not limited to high efficiencies and long lifetimes. Scale them down, arrange them in arrays and equip them with fast-responding colour converters, and these devices are very promising broadband sources for high speed, light-based wireless communicationBY JONATHAN MCKENDRY FROM THE UNIVERSITY OF STRATHCLYDE
Wednesday 30th March 2016
The planned merger of CS Clean Systems and Centrotherm Clean Solutions creates a single-source vendor offering a full suite of exhaust gas abatement products
Wednesday 30th March 2016
Wafer-level, chip scale packaging using 200 mm silicon substrates improves wavelength uniformity, reduces thermal droop, aids radiative efficiency and slashes LED production costsBY HYUN KUM, JOOSUNG KIM, YONGJO TAK, JONGSUN MAENG, JUN-YOUN KIM AND YOUNGSOO PARK FROM SAMSUNG ELECTRONICS
Tuesday 29th March 2016
Defect-trapping pockets enable the growth of high-quality films of GaAs on large-area, conventional silicon substrates 
Tuesday 29th March 2016
Tunnel FETs are the post-CMOS solution, thanks to their ability to deliver great performance while consuming very little power 
Tuesday 22nd March 2016
Introducing new channel materials lays the groundwork for slashing the power consumption per transistor
Tuesday 22nd March 2016
A vertical architecture holds the key to producing rugged transistors with a small footprint and a very high operating voltage
Thursday 17th March 2016
To maintain the march of Moore’s law, silicon foundries may introduce germanium and III-V nanowire FETs at the 5 nm node
Monday 14th March 2016
Highly uniform metal alloys of precise stoichiometry result from an optimally placed and replenished source in an electron-beam evaporator
Wednesday 9th March 2016
The key to producing novel ICs with high efficiency and great functionality is to employ CMOS foundry process flows for the monolithic integration of silicon and III-V devices BY DAVID KOHEN, ABDUL KADIR, KENNETH LEE, FAYYAZ SINGAPOREWALA AND EUGENE FITZGERALD FROM SINGAPORE-MIT ALLIANCE FOR RESEARCH AND TECHNOLOGY
Tuesday 16th February 2016
Optical spectroscopy exposes fundamental flaws in the well-known model for LED droop BY ANDREAS HANGLEITER AND TORSTEN LANGER FROM THE TECHNISCHE UNIVERSITÄT BRAUNSCHWEIG, GERMANY
Tuesday 16th February 2016
The front-ends of smartphones should not be served by a single material. Instead, to ensure sufficient performance, they should combine a GaAs-based power amplifier with a silicon-on-insulator switch and filters made from piezolelectricsBY JAMES YOUNG FROM SKYWORKS
Monday 8th February 2016
Sales of SiC substrates will rise significantly as shipments shift to the 6-inch format and established suppliers face increased competition from Chinese start-ups. Pierric Gueguen, an analyst from Yole Développement covering the power electronics and compound semiconductor markets, discusses all this and more in an interview with Richard Stevenson.
Monday 21st December 2015
Grow GaN transistors on silicon and their bang-per-buck increases, widening deployment from defence markets to mainstream commercial applicationsBY TOM KOLE FROM MACOM
Monday 30th November 2015
From the buffer layer to the very top of the device, a novel form of SIMS can uncover troublesome impurities in GaN-on-silicon HEMTs BY TEMEL H. BUYUKLIMANLI AND CHARLES W. MAGEE FROM EVANS ANALYTICAL GROUP
Monday 16th November 2015
SiC MOSFETs can be made as cheaply as silicon IGBTs by processing 150 mm epiwafers on silicon linesBY SUJIT BANERJEE, KEVIN MATOCHA AND KIRAN CHATTY FROM MONOLITH SEMICONDUCTOR
Monday 16th November 2015
Optimising V-shaped pits combats droop by preventing carriers from disappearing into non-radiative threading dislocations  BY CHIAO-YUN CHANG, HENG LI AND TIEN-CHANG LU FROM THE NATIONAL CHIAO TUNG UNIVERSITY
Wednesday 11th November 2015
More efficient power switching devices are required to meet the energy demands forecasted over the next 20 years. BY BRYAN BOTHWELL, DAVID DRUMMOND AND MANYAM PILLA FROM QORVO, AND HUILI GRACE XING AND DEBDEEP JENA FROM CORNELL UNIVERSITY

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